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參數(shù)資料
| 型號(hào)： | UPA1478H |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE |
| 中文描述： | NPN硅晶體管陣列低功率高速開(kāi)關(guān)使用工業(yè)用達(dá)林頓晶體管 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 59K |
| 代理商： | UPA1478H |
SILICON TRANSISTOR ARRAY
μ
PA1478
DESCRIPTION
The
μ
PA1478 is NPN silicon epitaxial Darlington
Power Transistor Array that built in Surge Absorber and
4 circuits designed for driving solenoid, relay, lamp and
so on.
FEATURES
Surge Absorber (Zener Diode) built in.
Easy mount by 0.1 inch of terminal interval.
High h
FE
for Darlington Transistor.
ORDERING INFORMATION
Part Number
Package
Quality Grade
μ
PA1478H
10 Pin SIP
Standard
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage V
CEO
Emitter to Base Voltage
Surge Sustaining Energy
Collector Current (DC)
Collector Current (pulse)
Total Power Dissipation
Total Power Dissipation
J unction Temperature
Storage Temperature
V
CBO
31
±
4
31
±
4
7
40
±
2
±
4
3.5
28
150
V
V
V
V
EBO
E
CEO (SUS)
I
C(DC)
I
C(pulse)
*
P
T1
**
P
T2
***
T
J
T
stg
mJ /unit
A/unit
A/unit
W
W
C
C
–55 to +150
*
PW
≤
300
μ
s, Duty Cycle
≤
10 %
**
4 Circuits, T
a
= 25 C
***
4 Circuits, T
c
= 25 C
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
PACKAGE DIMENSION
(in millimeters)
1 2 3 4 5 6 7 8 910
1
26.8 MAX.
1.4
0.6 ±0.1
2.54
2
4.0
1
1.4
0.5 ±0.1
CONNECTION DIAGRAM
2
3
1
4
6
8
5
7
9
10
(C)
(E)
(B)
R
1
R
2
PIN No.
2, 4, 6, 8
3, 5, 7, 9
1, 10
: Base (B)
: Collector (C)
: Emitter (E)
R
1
= 10 k
R
2
= 500
The information in this document is subject to change without notice.
1994
DATA SHEET
Document No. IC-3566
(O.D. No. IC-6634)
Date Published November 1994 P
Printed in J apan
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