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參數(shù)資料
| 型號(hào)： | UPA1453H |
| 廠商： | NEC Corp. |
| 英文描述： | PNP SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE INDUSTRIAL USE |
| 中文描述： | 進(jìn)步黨硅功率晶體管陣列高速開關(guān)使用工業(yè)用 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 54K |
| 代理商： | UPA1453H |
μ
PA1453
2
ELECTRICAL CHARACTERISTICS (T
a
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Leakage Current
I
CBO
–10
μ
A
V
CB
= –50 V, I
E
= 0
Emitter Leakage Current
I
EBO
–10
μ
A
V
EB
= –5 V, I
C
= 0
DC Current Gain
h
FE1
*
60
220
—
V
CE
= –1 V, I
C
= –0.1 A
DC Current Gain
h
FE2
*
100
220
400
—
V
CE
= –1 V, I
C
= –2 A
DC Current Gain
h
FE3
*
50
100
V
CE
= –2 V, I
C
= –5 A
Collector Saturation Voltage
V
CE(sat)
*
–0.2
–0.3
V
I
C
= –2 A, I
B
= –0.2 A
Base Saturation Voltage
V
BE(sat)
*
–0.9
–1.2
V
I
C
= –2 A, I
B
= –0.2 A
Turn On Time
t
on
1
μ
s
Storage Time
t
stg
2.5
μ
s
Fall Time
t
f
1
μ
s
*
PW
≤
350
μ
s, Duty Cycle
≤
2 % / pulsed
SWITCHING TIME TEST CIRCUIT
T.U.T.
R
L
..
I
C
I
B1
I
B2
V
IN
PW
PW ..
Duty Cycle
≤
2 %
V
BB
..
Base Current
Wave Form
Collector
Current
Wave Form
I
B2
I
B1
I
C
t
f
t
stg
t
on
90 %
10 %
V
CC
..
I
C
= –2 A
I
B1
= –I
B2
= –0.2 A
V
CC
..
L
..
See test circuit
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1454 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE |
| UPA1454H | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE |
| UPA14558-1 | 制造商:CUSTOMER'S PART # 功能描述: |
| UPA1456 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE |
| UPA1456H | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE |
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