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參數(shù)資料
| 型號(hào)： | UMB8NTR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SC-88, 6 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 58K |
| 代理商： | UMB8NTR |
UMB8N
Transistors
Rev.A
1/2
General purpose (dual digital transistors)
UMB8N
Feature
1) Two DTA114T chips in a UMT package.
Equivalent circuits
UMB8N
(3)
(2)
(1)
(4) (5)
(6)
R1
Package, marking, and packaging specifications
Type
UMB8N
UMT6
B8
TR
3000
Package
Marking
Code
Basic ordering unit (pieces)
External dimensions (Unit : mm)
UMB8N
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
0to0.1
( 6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
( 1
)
0.65
( 4
)
( 3
)
( 2
)
( 5
)
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
50
5
100
150(TOTAL)
150
55 to +150
Unit
V
mA
mW
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
1
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Transition frequency
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
50
5
100
250
250
0.5
0.3
600
V
A
V
MHz
R1
710
13
k
IC
=50A
IC
=1mA
IE
=50A
VCB
=50V
VEB
=4V
VCE
=10V, IE=5mA, f=100MHz
IC/IB
=10mA/1mA
VCE
=5V, IC=1mA
Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
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