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參數(shù)資料
| 型號(hào)： | UMB10N |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | General purpose (dual digital transistors) |
| 中文描述： | 通用（雙數(shù)字晶體管） |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 73K |
| 代理商： | UMB10N |
EMB10 / UMB10N / IMB10A
Transistors
General purpose
(dual digital transistors)
EMB10 / UMB10N / IMB10A
z
Features
1) Two DTA123J chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
z
Structure
Epitaxial planar type
PNP silicon transistor (Built-in resistor type)
The following characteristics apply to both DTr
1
and
DTr
2
.
z
Equivalent circuit
ROHM : UMT6
EIAJ : SC-88
Rev.A
1/2
EMB10 / UMB10N
IMB10A
DTr
2
DTr
1
(3)
(2)
(1)
(3)
(2)
(1)
(4)
(5)
R
2
(6)
(4)
(5)
(6)
R
1
R
2
R
2
R
1
DTr
2
DTr
1
R
1
R
2
R
1
R
2
=47k
R
1
=2.2k
R
2
=47k
R
1
=2.2k
z
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Symbol
Limits
Unit
V
CC
50
V
12
V
V
IN
5
I
O
100
100
mA
I
C (Max.)
Tj
150
C
Tstg
55 to
+
150
C
Pd
EMB10, UMB10N
150 (TOTAL)
mW
IMB10A
300 (TOTAL)
1
2
Supply voltage
Input voltage
Output current
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Power
dissipation
z
External dimensions
(Unit : mm)
ROHM : EMT6
EMB10
UMB10N
ROHM : SMT6
EIAJ : SC-74
IMB10A
Abbreviated symbol : B10
Abbreviated symbol : B10
Abbreviated symbol : B10
0
1.2
1.6
(1)
(2)
(5)
(6)
(3)
(4)
0
0
0
0
1
1
Each lead has same dimensions
0
(
2
1
0
0
0
0.1Min.
2.1
0
0
1.25
(
0
(
(
(
(
Each lead has same dimensions
(
(
(
0.3to0.6
0
0
1
0
0
(
2.8
1.6
1
2
0
0
(
(
Each lead has same dimensions
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