參數(shù)資料
型號(hào): UMA1015M
廠商: NXP SEMICONDUCTORS
元件分類(lèi): XO, clock
英文描述: Low-power dual frequency synthesizer for radio communications
中文描述: PLL FREQUENCY SYNTHESIZER, 1100 MHz, PDSO20
封裝: PLASTIC, SOT-266A, SSOP-20
文件頁(yè)數(shù): 7/24頁(yè)
文件大?。?/td> 229K
代理商: UMA1015M
1995 Jun 22
7
Philips Semiconductors
Product specification
Low-power dual frequency synthesizer
for radio communications
UMA1015M
Power-down modes
The device can be powered down either via pin HPD
(active LOW = power-down) or via the serial bus (bits
SPDA and SPDB, logic 0 = power-down). The
synthesizers are powered up when both hardware and
software Power-down signals are at logic 1. When only
one synthesizer is powered down, the functions common
to both will be maintained. When both synthesizers are
switched off, only the voltage doubler (if enabled) will
remain active drawing a reduced current. An internal
oscillator will drive the doubler in this situation. If both
synthesizers have been in a power-down condition, then
when one or both synthesizers are reactivated, the
reference and main dividers restart in such a way as to
avoid large random phase errors at the phase comparator.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
DD1
, V
DD2
DC range of digital power supply voltage with respect
to DGND
DC charge pump supply voltage with respect to AGND
0.3
difference in voltage between V
CC
and V
DD1
, V
DD2
DC voltage at pins 1, 2, 5, 6, 8 to 15, 19 and 20 with
respect to DGND
DC voltage at pins 3 and 17 with respect to AGND
difference in voltage between AGND and DGND
(these pins should be connected together)
storage temperature
operating ambient temperature
0.3
+6.0
V
V
CC
V
CC-DD
V
n
+6.0
+6.0
V
DD1
+ 0.3
V
V
V
0.3
0.3
V
3, 17
V
GND
0.3
0.3
V
CC
+ 0.3
+0.3
V
V
T
stg
T
amb
55
30
+125
+85
°
C
°
C
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