- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382708 > U634H256CSC45 NVRAM (EEPROM Based) PDF資料下載
參數(shù)資料
| 型號： | U634H256CSC45 |
| 英文描述： | NVRAM (EEPROM Based) |
| 中文描述： | NVRAM中（EEPROM的基礎(chǔ)） |
| 文件頁數(shù)： | 9/14頁 |
| 文件大小： | 239K |
| 代理商： | U634H256CSC45 |
9
December 12, 1997
U634H256
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAA
AAA
AAA
u: If the chip enable pulse width is less then t
a(E)
(see READ cycle) but greater than or equal to t
w(E)SR
, then the data may not be valid at
the end of the low pulse, however the STORE or RECALL will still be initiated.
v:
W must be HIGH when E is LOW during the address sequence in order to initiate a nonvolatile cycle. G may be either HIGH or LOW
throughout. Addresses 1 through 6 are found in the mode selection table. Address 6 determines whether the U634H256 performs a STORE
or RECALL.
w: E must be used to clock in the address sequence for the software controlled STORE and RECALL cycles.
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAA
AAA
AAA
AAA
Ai
E
DQi
Output
t
cR
t
w(E)SR
ADDRESS 1
VALID
SOFTWARE CONTROLLED STORE/RECALL CYCLE
t, u, v, w
(E = HIGH after STORE initiation)
ADDRESS 6
t
cR
29
29
t
h(A)SR
35
34
t
su(A)SR
33
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAA
AAA
AAA
Ai
E
DQi
Output
t
cR
t
w(E)SR
ADDRESS 1
VALID
VALID
ADDRESS 6
t
d(E)S
/ t
d(E)R
31
32
/
29
t
h(A)SR
35
34
t
su(A)SR
33
t
dis(E)SR
30
t
h(A)SR
35
t
su(A)SR
33
t
w(E)SR
t
h(A)SR
35
34
t
su(A)SR
33
5
t
dis(E)
SOFTWARE CONTROLLED STORE/RECALL CYCLE
t, u, v, w
(E = LOW after STORE initiation)
t
dis(E)SR
30
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAA
AAA
AAA
VALID
High Impedance
High Impedance
t
d(E)S
/ t
d(E)R
31
32
/
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| U634H256CSK25 | NVRAM (EEPROM Based) |
| U634H256CSK35 | NVRAM (EEPROM Based) |
| U634H256CSK45 | Precision low noise dual operational amplifier |
| U634H256S2A25G1 | PowerStore 32K x 8 nvSRAM |
| U634H256S2A35G1 | PowerStore 32K x 8 nvSRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| U634H256CSK25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U634H256CSK35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U634H256CSK45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U634H256D1A25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:POWERSTORE 32K X 8 NVSRAM |
| U634H256D1A25G1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:POWERSTORE 32K X 8 NVSRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。