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參數(shù)資料
| 型號： | U634H256CD1C25 |
| 英文描述： | NVRAM (EEPROM Based) |
| 中文描述： | NVRAM中（EEPROM的基礎(chǔ)） |
| 文件頁數(shù)： | 12/14頁 |
| 文件大?。?/td> | 239K |
| 代理商： | U634H256CD1C25 |
12
December 12, 1997
U634H256
1.
2.
3.
4.
5.
6.
Read address
Read address
Read address
Read address
Read address
Read address
0E38 (hex) Valid READ
31C7
(hex) Valid READ
03E0 (hex) Valid READ
3C1F
(hex) Valid READ
303F (hex) Valid READ
0FC0
(hex) Initiate STORE
Once the sixth address in the sequence has been
entered, the STORE cycle will commence and the chip
will be disabled. It is important that READ cycles and
not WRITE cycles are used in the sequence, although it
is not necessary that G is LOW for the sequence to be
valid. After the t
STORE
cycle time has been fulfilled, the
SRAM will again be activated for READ and WRITE
operation.
SOFTWARE NONVOLATILE RECALL
A RECALL cycle of the EEPROM data into the SRAM
is initiated with a sequence of READ operations in a
manner similar to the STORE initiation. To initiate the
RECALL cycle the following sequence of READ opera-
tions must be performed:
1.
2.
3.
4.
5.
6.
Read address
Read address
Read address
Read address
Read address
Read address
0E38 (hex) Valid READ
31C7
(hex) Valid READ
03E0 (hex) Valid READ
3C1F
(hex) Valid READ
303F (hex) Valid READ
0C63
(hex) Initiate RECALL
Internally, RECALL is a two step procedure. First, the
SRAM data is cleared and second, the nonvolatile
information is transferred into the SRAM cells. The
RECALL operation in no way alters the data in the
EEPROM cells. The nonvolatile data can be recalled
an unlimited number of times.
HSB NONVOLATILE STORE
The hardware controlled STORE Busy pin (HSB) is
connected to an open drain circuit acting as both input
and output to perform two different functions. When
driven LOW by the internal chip circuitry it indicates that
a STORE operation (initiated via any means) is in pro-
gress within the chip. When driven LOW by external cir-
cuitry for longer than t
w(H)S
, the chip will conditionally
initiate a STORE operation after t
dis(H)S
.
READ and WRITE operations that are in progress
when HSB is driven LOW (either by internal or external
circuitry) will be allowed to complete before the STORE
operation is performed, in the following manner.
After HSB goes LOW, the part will continue normal
SRAM operation for t
dis(H)S
. During t
dis(H)S
, a transition
on any address or control signal will terminate SRAM
operation and cause the STORE to commence.
Note that if an SRAM WRITE is attempted after HSB
has been forced LOW, the WRITE will not occur and
the STORE operation will begin immediately.
HARDWARE-STORE-BUSY (HSB) is a high speed,
low drive capability bidirectional control line.
In order to allow a bank of U634H256s to perform syn-
chronized STORE functions, the HSB pin from a num-
ber of chips may be connected together. Each chip
contains a small internal current source to pull HSB
HIGH when it is not being driven LOW. To decrease the
sensitivity of this signal to noise generated on the PC
board, it has to be pulled to power supply via an exter-
nal resistor with a value such that the combined load of
the resistor and all parallel chip connections does not
exceed I
HSBOL
at V
OL
(see Figure 1 and 2).
If HSB is to be connected to external circuits other than
other U634H256s, an external pull-up resistor has to be
used.
During any STORE operation, regardless of how it was
initiated, the U634H256 will continue to drive the HSB
pin LOW, releasing it only when the STORE is com-
plete.
Upon completion of a STORE operation, the part will be
disabled until HSB actually goes HIGH.
HARDWARE PROTECTION
The U634H256 offers hardware protection against
inadvertent STORE operation during low voltage condi-
tions. When V
CAP
< V
SWITCH
, all software or HSB initia-
ted STORE operations will be inhibited.
PREVENTING AUTOMATIC STORES
The PowerStorefunction can be disabled on the fly by
holding HSB HIGH with a driver capable of sourcing
15 mA at V
OH
of at least 2.2 V as it will have to overpo-
wer the internal pull-down device that drives HSB LOW
for 50 ns at the onset of an PowerStore.
When the U634H256 is connected for PowerStoreope-
ration (see Figure 1) and V
CCX
crosses V
SWITCH
on the
way down, the U634H256 will attempt to pull HSB
LOW; if HSB doesn
′
t actually get below V
IL
, the part will
stop trying to pull HSB LOW and abort the PowerStore
attempt
.
DISABELING AUTOMATIC STORES
If the PowerStore function is not required, then V
CAP
should be tied directly to the power supply and V
CCX
should by tied to ground. In this mode, STORE opera-
tion may be triggered through software control or the
HSB pin. In either event, V
CAP
(Pin 1) must always
have a proper bypass capacitor connected to it (Figure
2).
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| U634H256CD1C35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
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| U634H256CD1K25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U634H256CD1K35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U634H256CD1K45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
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