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參數資料
| 型號： | U632H64D1C25 |
| 英文描述： | NVRAM (EEPROM Based) |
| 中文描述： | NVRAM中（EEPROM的基礎） |
| 文件頁數： | 9/14頁 |
| 文件大小： | 155K |
| 代理商： | U632H64D1C25 |
9
November 01, 2001
U632H64
u: If the chip enable pulse width is less then t
a(E)
(see READ cycle) but greater than or equal to t
w(E)SR
, then the data may not be valid at
the end of the low pulse, however the STORE or RECALL will still be initiated.
v:
W must be HIGH when E is LOW during the address sequence in order to initiate a nonvolatile cycle. G may be either HIGH or LOW
throughout. Addresses 1 through 6 are found in the mode selection table. Address 6 determines whether the U632H64 performs a STORE
or RECALL.
w: E must be used to clock in the address sequence for the Software controlled STORE and RECALL cycles.
Ai
E
DQi
Output
t
cR
t
w(E)SR
(34)
High Impedance
ADDRESS 1
VALID
VALID
t
dis(E)SR
(30)
Software Controlled STORE/RECALL Cycle
t, u, v, w
(E = HIGH after STORE initiation)
ADDRESS 6
(29)
(29)
t
h(A)SR
(35)
t
su(A)SR
(33)
t
cR
t
w(E)SR
(34)
High Impedance
ADDRESS 1
VALID
VALID
ADDRESS 6
(29)
t
h(A)SR
(35)
t
su(A)SR
(33)
t
dis(E)SR
(30)
t
h(A)SR
(35)
t
su(A)SR
(33)
t
w(E)SR
(34)
t
h(A)SR
(35)
t
su(A)SR
(33)
(5)
t
dis(E)
t
d(E)R
Software Controlled STORE/RECALL Cycle
t, u, v, w
(E = LOW after STORE initiation)
Ai
E
DQi
Output
t
d(E)S
(31)
(32)
t
d(E)S
(31)
(32)
t
d(E)R
t
cR
相關PDF資料 |
PDF描述 |
|---|---|
| U632H64D1C35 | HIGH PERFORMANCE CMOS DUAL OP-AMPS |
| U632H64D1C45 | NVRAM (EEPROM Based) |
| U632H64D1K25 | NVRAM (EEPROM Based) |
| U632H64D1K35 | HIGH PERFORMANCE CMOS DUAL OP-AMPS |
| U632H64D1K45 | NVRAM (EEPROM Based) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| U632H64D1C35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U632H64D1C45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U632H64D1K25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U632H64D1K35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U632H64D1K45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
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