U2305B
TELEFUNKEN Semiconductors
Rev. A1, 10-Sep-96
4 (8)
Preliminary Information
Electrical Characteristics (continued)
Parameters
Band A
Input frequency range
Input impedance
Gain (note 4)
Noise figure DSB (note 2)
Test Conditions / Pins
Symbol
Min
Typ
Max
Unit
Pin 24
Pin 24
fiA
S11A
GA
48
170
MHz
Figure 3
Pin I/P to O/P
Pin I/P to O/P
fiA = 50 MHz
fiA = 150 MHz
Each carrier
fiA = 71 MHz Pin I/P
fiA = 71 MHz Pin I/P
28
dB
NF
NF
11.5
12
dB
dB
Input level for (note 3):
IM3 (interm. of 3rd order
IM2 (interm. of 2nd order)
Band B (note 1)
Input frequency range
Input impedance
Gain (note 4)
Noise figure DSB (note 2)
ViA
ViA
–23
–22
dBm
dBm
Pin 22, 23
Pin 22, 23
fiA
S11B
GB
170
470
MHz
see Fig. 3
32
Pin I/P to O/P
Pin I/P to O/P
fiB = 200 MHz
fiB = 450 MHz
Each carrier
fiB = 300 MHz Pin I/P
dB
NF
NF
9.5
10
dB
dB
Input level for (note 3):
IM3 (interm. of 3rd order)
Band C (note 1)
Input frequency range
Input impedance
Gain
Noise figure DSB (note 2)
ViB
–28
dBm
Pin 20, 21
Pin 20, 21
fiC
S11C
GC
470
860
MHz
Figure 3
Pin I/P to O/P
Pin I/P to O/P
fiC = 500 MHZ
fiC = 800 MHz
Each carrier
fiC = 600 MHz Pin I/P
32
dB
NF
NF
ViC
10.5
11.5
–28
dB
dB
dBm
Input level for IM3
(interm. of 3rd order, note 3)
Notes
1)
The RF inputs B and C are symmetrical driven by means of a hybrid for 180
°
phase shifting, consequently the
source impedance is 100 . All other impedance for RF tests is 50 .
The noise figure (NF) is the value for double-side-band measurement.
The intermodulation test (2-carrier-method) which is made on IF-centre is in reference to a signal-to-IM ratio
of 60 dB.
Gain is the ratio of the voltage at the primary coil of L5 to the available voltage at the input.
2)
3)
4)