參數(shù)資料
型號(hào): TXB0102DCTT
廠商: Texas Instruments, Inc.
英文描述: 2-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTO DIRECTION SENSING AND 【15-kV ESD PROTECTION
中文描述: 2位雙向電壓電平與汽車方向傳感及【15 - kV ESD保護(hù)譯者
文件頁數(shù): 9/17頁
文件大?。?/td> 417K
代理商: TXB0102DCTT
www.ti.com
PRINCIPLES OF OPERATION
Applications
The TXB0102 can be used in level-translation applications for interfacing devices or systems operating at
different interface voltages with one another.
Architecture
The TXB0102 architecture (see
Figure 1
) does not require a direction-control signal to control the direction of
data flow from A to B or from B to A. In a dc state, the output drivers of the TXB0101 can maintain a high or low,
but are designed to be weak, so that they can be overdriven by an external driver when data on the bus starts
flowing the opposite direction.
4k
4k
A
B
V
CCA
V
CCB
One
Shot
One
Shot
One
Shot
One
Shot
T1
T2
T3
T4
Input Driver Requirements
Typical I
IN
vs V
IN
characteristics of the TXB0102 are shown in
Figure 2
. For proper operation, the device driving
the data I/Os of the TXB0102 must have drive strength of at least
±
2 mA.
TXB0102
2-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR
WITH AUTO DIRECTION SENSING AND
±
15-kV ESD PROTECTION
SCES641–MAY 2007
The output one shots detect rising or falling edges on the A or B ports. During a rising edge, the one shot turns
on the PMOS transistors (T1, T3) for a short duration, which speeds up the low-to-high transition. Similarly,
during a falling edge, the one shot turns on the NMOS transistors (T2, T4) for a short duration, which speeds up
the high-to-low transition. The typical output impedance during output transition is 70
at V
CCO
= 1.2 V to 1.8 V,
50
at V
CCO
= 1.8 V to 3.3 V, and 40
at V
CCO
= 3.3 V to 5 V.
Figure 1. Architecture of TXB0102 I/O Cell
9
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