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參數(shù)資料
| 型號： | TSHG8200 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 激光器 |
| 英文描述： | LED IrLED 830nm 2-Pin T-1 3/4 |
| 中文描述： | Infrared Emitters High Speed Emitter 5V 50mW 830nm 10 Deg |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 105K |
| 代理商： | TSHG8200 |
TSHG8200
www.vishay.com
Vishay Semiconductors
Rev. 1.3, 23-Aug-11
3
Document Number: 84755
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 2 - Pulse Forward Current vs. Pulse Duration
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Radiant Intensity vs. Forward Current
Fig. 5 - Radiant Power vs. Forward Current
Fig. 6 - Relative Radiant Power vs. Wavelength
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
100
1000
0.01
0.1
t
p
- P
u
lse D
u
ration (ms)
1
10
100
16031
t
p
/T = 0.01
0.05
0.2
0.5
0.1
0.02
T
am
b
< 50 °C
I
F
w
a
u
r
18873
I
F
w
a
u
r
1000
100
10
1
V
F
- For
w
ard Voltage (V)
0
2
4
t
p
= 100 μs
t
p
/T = 0.001
1
3
0.1
1
10
100
1000
1
10
100
1000
16032
I
F
- For
w
ard C
u
rrent (mA)
I
e
W
/
0.1
1
10
100
1000
1
1
100
0
1000
16971
I
F
- For
w
ard C
u
rrent (mA)
-
w
e
W
)
e
740
800
λ
-
W
a
v
elength (nm)
900
16972_1
0
0.25
0.5
0.75
1.0
1.25
Φ
e
v
e
w
e
0.4
0.2
0
I
e
v
e
15989
0.6
0.9
0.8
0°
30°
10°
20°
40°
50°
60°
70°
80°
0.7
1.0
u
l
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TSHG8200_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero |
| TSHG8200-ASZ | 制造商:Vishay Semiconductors 功能描述:IR EMITTER DH 830NM 5MM 10 DEG-E2, AMMO PACKAGE ENDING - Ammo Pack |
| TSHG8400 | 功能描述:紅外發(fā)射源 High Speed Emitter 5V 50mW 830nm 22 Deg RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| TSHG8400_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero |
| TSHG8400-ASZ | 制造商:Vishay Semiconductors 功能描述:IRED, HIGH POWER, +/- 22?, 830NM, 5MM - Bulk |
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