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參數(shù)資料
| 型號(hào)： | TSHF5210 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 激光器 |
| 英文描述： | LED IrLED 890nm 2-Pin T-1 3/4 Bulk |
| 中文描述： | Infrared Emitters High Speed Emitter 5V 50mW 870nm 24 Deg |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 100K |
| 代理商： | TSHF5210 |
TSHF5210
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 24-Aug-11
1
Document Number: 81313
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
High Speed Infrared Emitting Diode, 890 nm,
GaAlAs Double Hetero
DESCRIPTION
TSHF5210 is an infrared, 890 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
FEATURES
Package type: leaded
Package form: T-1
Dimensions (in mm): 5
Leads with stand-off
Peak wavelength:
λ
p
= 890 nm
High reliability
High radiant power
High radiant intensity
Angle of half intensity:
= ± 10°
Low forward voltage
Suitable for high pulse current operation
High modulation bandwidth: f
c
= 12 MHz
Good spectral matching with Si photodetectors
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc99902
APPLICATIONS
Infrared high speed remote control and free air data
transmission systems with high modulation frequencies or
high data transmission rate requirements
Transmission systems according to IrDA requirements and
for carrier frequency based systems (e.g. ASK/FSK -
coded, 450 kHz or 1.3 MHz)
Smoke-automatic fire detectors
Note
Test conditions see table “Basic Characteristics“
Note
MOQ: minimum order quantity
94 8390
PRODUCT SUMMARY
COMPONENT
TSHF5210
I
e
(mW/sr)
180
(deg)
± 10
λ
p
(nm)
890
t
r
(ns)
30
ORDERING INFORMATION
ORDERING CODE
TSHF5210
PACKAGING
Bulk
REMARKS
PACKAGE FORM
T-1
MOQ: 4000 pcs, 4000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
t
p
/T = 0.5, t
p
= 100 μs
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t
≤
5 s, 2 mm from case
Thermal resistance junction/ambient
J-STD-051, leads 7 mm, soldered on PCB
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
5
100
200
1.5
160
100
- 40 to + 85
- 40 to + 100
260
230
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
t
p
= 100 μs
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TSHF5210_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero |
| TSHF5210_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero |
| TSHF5210-AS12Z | 制造商:Vishay Semiconductors 功能描述: |
| TSHF5210-ES21 | 制造商:Vishay Intertechnologies 功能描述:890 nm 100 mA 10 T-1 3/4 Through Hole High Speed Infrared Emitting Diode |
| TSHF5400 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed IR Emitting Diode in ?5 mm (T-13/4) Package |
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