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參數(shù)資料
| 型號(hào)： | TSDF52424X-GS08 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 音頻／視頻放大 |
| 英文描述： | 2 CHANNEL, VIDEO AMPLIFIER, PDSO6 |
| 封裝： | ROHS COMPLIANT, PLASTIC, SOT-363, 6 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 227K |
| 代理商： | TSDF52424X-GS08 |
www.vishay.com
2
Document Number 85077
Rev. 1.4, 02-May-05
TSDF52424X / TSDF52424XR
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Maximum Thermal Resistance
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35
μm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
VDS = 5 V, VG2S = 4 V, ID= IDSP , f = 1 MHz
Parameter
Test condition
Symbol
Value
Unit
Drain - source voltage
VDS
8V
Drain current
ID
25
mA
Gate 1/Gate 2 - source peak
current
± IG1/G2SM
10
mA
Gate 1/Gate 2 - source voltage
± VG1/G2SM
6V
Total power dissipation
Tamb ≤ 60 °C
Ptot
200
mW
Channel temperature
TCh
150
°C
Storage temperature range
Tstg
- 55 to + 150
°C
Parameter
Test condition
Symbol
Value
Unit
Channel ambient
1)
RthChA
450
K/W
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Gate 1 - source breakdown
voltage
± IG1S = 10 mA, VG2S = VDS = 0 ± V(BR)G1SS
710
V
± IG2S = 10 mA, VG1S = VDS = 0 ± V(BR)G2SS
710
V
Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0
+ IG1SS
50
μA
- VG1S = 5 V, VG2S = VDS = 0
- IG1SS
100
μA
Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0
± IG2SS
20
nA
Drain current
VDS = 5 V, VG1S = 0, VG2S = 4 V
IDSS
50
250
μA
Self-biased operating current
VDS = 5 V, VG1S = nc, VG2S = 4 V
IDSP
813
18
mA
Gate 2 - source cut-off voltage
VDS = 5 V, VG1S = nc, ID = 20 μAVG2S(OFF)
0.8
1.0
1.4
V
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward transadmittance
|y21s|
202428
mS
Gate 1 input capacitance
Cissg1
1.7
2.1
pF
Feedback capacitance
Crss
15
30
fF
Output capacitance
Coss
0.9
pF
Power gain
GS = 2 mS, GL = 0.5 mS,
f = 200 MHz
Gps
26
dB
GS = 3,3 mS, GL = 1 mS,
f = 800 MHz
Gps
16.5
21
dB
AGC range
VDS = 5 V, VG2S = 1 to 4 V,
f = 800 MHz
ΔG
ps
45
dB
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