參數(shù)資料
型號: TPU3040PQ
元件分類: 圖文
英文描述: TELETEXT DECODER, PQCC44
封裝: PLASTIC, LCC-44
文件頁數(shù): 15/72頁
文件大?。?/td> 347K
代理商: TPU3040PQ
TPU 3035, TPU 3040, TPU 3050
PRELIMINARY DATA SHEET
22
Micronas
3.6.15. DRAM Interface Characteristics
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
VIL
Input Low Voltage
3
0.8
V
VIH
Input High Voltage
2.0
V
VOL
Output Low Voltage
3 to 18
0.4
V
IL = 1.6 mA
VOH
Output High Voltage
2.4
V
IL = *0.5 mA
tT
Output Transition Time
5
10
ns
CL = 15 pF
VOL(max) VOH(min)
3.6.15.1. DRAM Fast Mode Timing at fCLK = 20.25 MHz
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
tPC
Page Mode Cycle Time
6
98.8
ns
DRAM:
tPC
>55
tCAS
CAS Pulse Width
60
ns
DRAM:
tCAS >25
tCP
CAS Precharge Time
10
ns
DRAM:
tCP
>10
tRP
RAS Precharge Time
5
90
ns
DRAM:
tRP
>80
tRSH
RAS Hold Time
5, 6
40
ns
DRAM:
tRSH >25
tCSH
CAS Hold Time
110
ns
DRAM:
tCSH > 100
tRCD
RAS to CAS Delay Time
45
ns
DRAM:
tRCD >25
tCRP
CAS to RAS Precharge Time
55
ns
DRAM:
tCRP >10
tASR
Row Address Setup Time
5, 7 to 18
55
ns
DRAM:
tASR >0
tRAH
Row Address Hold Time
15
ns
DRAM:
tRAH >15
tAR
Column Address Hold Time
105
ns
DRAM:
tAR
>75
tRAL
Column Address Lead Time
55
ns
DRAM:
tRAL >50
tASC
Column Address Setup Time
6, 7 to 18
5
ns
DRAM:
tASC >0
tCAH
Column Address Hold Time
60
ns
DRAM:
tCAH >20
tRRH
Read Command Hold Time
4, 5
80
ns
DRAM:
tRRH >0
tRCH
Read Command Hold Time
4, 6
50
ns
DRAM:
tRCH >0
tWCH
Write Command Hold Time
90
ns
DRAM:
tWCH >20
tWCS
Write Command Setup Time
30
ns
DRAM:
tWCS >0
tDOHR
DATA Output Hold Time RAS
3, 5
105
ns
DRAM:
tDHR >75
tDOS
DATA Output Setup Time
3, 6
0
ns
DRAM:
tDS
>0
tDOH
DATA Output Hold Time
60
ns
DRAM:
tDH
>20
tDIS
DATA Input Setup Time
20
ns
DRAM:
tCAC <25
tDIH
DATA Input Hold Time
0
ns
DRAM:
tOFF <30
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