參數(shù)資料
型號： TPS62590DRVT
廠商： TEXAS INSTRUMENTS INC
元件分類： 穩(wěn)壓器
英文描述： 1 A SWITCHING REGULATOR, 2250 kHz SWITCHING FREQ-MAX, PDSO6
封裝： 2 X 2 MM, 0.80 MM HEIGHT, PLASTIC, SON-6
文件頁數(shù)： 18/24頁
文件大?。?/td> 619K
代理商： TPS62590DRVT
SLVS897B
– JANUARY 2009 – REVISED APRIL 2011
ELECTRICAL CHARACTERISTICS
Over full operating ambient temperature range, typical values are at TA = 25°C. Unless otherwise noted, specifications apply
for condition VIN = EN = 3.6V. External components CIN = 10μF 0603, COUT = 10μF 0603, L = 2.2μH, refer to parameter
measurement information.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY
VI
Input voltage range
2.5
5.5
V
VIN 2.7 V to 5.5 V
1000
IO
Output current
mA
VIN 2.5 V to 2.7 V
600
IO = 0 mA, PFM mode enabled
(MODE = GND) device not switching,
15
μA
See (1)
IQ
Operating quiescent current
IO = 0 mA, switching with no load
(MODE = VIN) PWM operation,
3.8
mA
VO = 1.8 V, VIN = 3 V
ISD
Shutdown current
EN = GND
0.5
μA
Falling
1.85
UVLO
Undervoltage lockout threshold
V
Rising
1.95
ENABLE, MODE
High level input voltage, EN,
2.5 V
≤ VIN ≤ 5.5 V
1
VIN
VIH
V
MODE
Low level input voltage, EN,
2.5 V
≤ VIN ≤ 5.5 V
0
0.4
VIL
V
MODE
II
Input bias current, EN, MODE
EN, MODE = GND or VIN
0.01
1
μA
POWER SWITCH
High-side MOSFET on-resistance
250
RDS(on)
VIN = VGS = 3.6 V, TA = 25°C
m
Low-side MOSFET on-resistance
190
Forward current limit MOSFET
ILIMF
VIN = VGS = 3.6 V
1.19
1.4
1.68
A
high-side and low-side
Thermal shutdown
Increasing junction temperature
140
TSD
°C
Thermal shutdown hysteresis
Decreasing junction temperature
20
OSCILLATOR
fSW
Oscillator frequency
2.5 V
≤ VIN ≤ 5.5 V
2.25
MHz
OUTPUT
VO
Adjustable output voltage range
0.75
VI
V
Vref
Reference voltage
600
mV
MODE = VIN, PWM operation,
VFB(PWM)
Feedback voltage
–2.5%
0%
2.5%
2.5 V
≤ VIN ≤ 5.5 V, See
(2)
MODE = GND, device in PFM mode,
VFB(PFM)
Feedback voltage PFM mode
1%
+1% voltage positioning active, See (1)
Load regulation
–1
%/A
Time from active EN to reach 95% of
500
tStart Up
Start-up time
μs
VO
tRamp
VO ramp-up time
Time to ramp from 5% to 95% of VO
250
μs
VI = 3.6 V, VI = VO = VSW, EN = GND,
Ilkg
Leakage current into SW pin
0.1
1
μA
See (3)
(1)
In PFM mode, the internal reference voltage is set to typ. 1.01
× Vref . See the parameter measurement information.
(2)
For VIN = VO + 1 V
(3)
In fixed output voltage versions, the internal resistor divider network is disconnected from FB pin.
Copyright
2009–2011, Texas Instruments Incorporated
3
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