參數(shù)資料
型號： TPS6223-1.5DRYT
廠商： TEXAS INSTRUMENTS INC
元件分類： 穩(wěn)壓器
英文描述： 1.22 A SWITCHING REGULATOR, 3800 kHz SWITCHING FREQ-MAX, PDSO6
封裝： 1 X 1.50 MM, 0.60 MM HEIGHT, PLASTIC, MO-287UFAD, SON-6
文件頁數(shù)： 23/28頁
文件大?。?/td> 1276K
代理商： TPS6223-1.5DRYT
SLVS941A – APRIL 2009 – REVISED AUGUST 2009....................................................................................................................................................... www.ti.com
ELECTRICAL CHARACTERISTICS
VIN = 3.6V, VOUT = 1.8V, EN = VIN, MODE = GND, TA = –40°C to 85°C
(1) typical values are at T
A = 25°C (unless otherwise
noted), CIN = 2.2μF, L = 2.2μH, COUT = 4.7μF, see parameter measurement information
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY
VIN
Input voltage range (2)
2.05
6
V
IOUT = 0mA. PFM mode enabled (Mode = 0)
22
40
μA
device not switching
IOUT = 0mA. PFM mode enabled (Mode = 0)
25
μA
IQ
Operating quiescent current
device switching, VIN = 3.6V, VOUT = 1.2V
IOUT = 0 mA. Switching with no load
(MODE/DATA = VIN), PWM operation,
3
mA
VOUT = 1.8V, L = 2.2μH
ISD
Shutdown current
EN = GND(3)
0.1
1
μA
Falling
1.8
1.9
V
VUVLO
Undervoltage lockout threshold
Rising
1.9
2.05
V
ENABLE, MODE THRESHOLD
VIH TH
Threshold for detecting high EN, MODE
2.05 V
≤ VIN ≤ 6V , rising edge
0.8
1
V
VIL TH HYS
Threshold for detecting low EN, MODE
2.05 V
≤ VIN ≤ 6V , falling edge
0.4
0.6
V
IIN
Input bias Current, EN, MODE
EN, MODE = GND or VIN = 3.6V
0.01
0.5
μA
POWER SWITCH
High side MOSFET on-resistance
600
850
RDS(ON)
VIN = 3.6V, TJmax = 85°C; RDS(ON) max value
m
Low Side MOSFET on-resistance
350
480
Forward current limit MOSFET
690
850
1050
mA
high-side
ILIMF
VIN = 3.6V, open loop
Forward current limit MOSFET low side
550
840
1220
mA
TSD
Thermal shutdown
Increasing junction temperature
150
°C
Thermal shutdown hysteresis
Decreasing junction temperature
20
°C
CONTROLLER
TONmin
Minimum ON time
VIN 3.6V, VOUT = 1.8V, Mode = high, IOUT = 0 mA
135
ns
TOFFmin
Minimum OFF time
40
ns
OUTPUT
VREF
Internal Reference Voltage
0.70
V
VIN = 3.6V, Mode = GND, device operating in PFM
0%
Mode, IOUT = 0mA
Output voltage accuracy(4)
VIN = 3.6V, MODE = VIN,
TA = 25°C
–2.0%
2.0%
VOUT
IOUT = 0 mA
TA = –40°C to 85°C
–2.5%
2.5%
DC output voltage load regulation
PWM operation, Mode = VIN = 3.6V, VOUT = 1.8 V
0.001
%/mA
DC output voltage line regulation
IOUT = 0 mA, Mode = VIN, 2.05V ≤ VIN ≤ 6V
0
%/V
Time from active EN to VOUT = 1.8V, VIN = 3.6V,
tStart
Start-up Time
100
μs
10
load
ILK_SW
Leakage current into SW pin
VIN = VOUT = VSW = 3.6 V, EN = GND
(5)
0.1
0.5
μA
(1)
In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may
have to be derated. Maximum ambient temperature (TA(max)) is dependent on the maximum operating junction temperature (TJ(max)), the
maximum power dissipation of the device in the application (PD(max)), and the junction-to-ambient thermal resistance of the
part/package in the application (
θJA), as given by the following equation: TA(max) = TJ(max) – (θJA × PD(max)).
(2)
The minimum required supply voltage for startup is 2.05V. The part is functional down to the falling UVL (Under Voltage Lockout)
threshold
(3)
Shutdown current into VIN pin, includes internal leakage
(4)
VIN = VO + 1.0 V
(5)
The internal resistor divider network is disconnected from FB pin.
4
Copyright 2009, Texas Instruments Incorporated
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