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參數(shù)資料
| 型號： | TPS3600x50PW |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | BATTERY-BACKUP SUPERVISORS FOR LOW-POWER PROCESSORS |
| 中文描述： | 電池備份監(jiān)事的低功耗處理器 |
| 文件頁數(shù)： | 8/26頁 |
| 文件大小： | 510K |
| 代理商： | TPS3600X50PW |
SLVS336B DECEMBER 2000 REVISED JANUARY 2007
8
detailed description (continued)
power-fail comparator (PFI and PFO)
An additional comparator is provided to monitor voltages other than the nominal supply voltage. The power-fail
input (PFI) will be compared with an internal voltage reference of 1.15 V. If the input voltage falls below the
power-fail threshold, V
(PFI)
, of 1.15 V typical, the power-fail output (PFO) goes low. If it goes above V
(PFI)
plus
about 12-mV hysteresis, the output returns to high. By connecting two external resistors, it is possible to
supervise any voltages above V
(PFI)
. The sum of both resistors should be about 1 M
, to minimize power
consumption and also to ensure that the current in the PFI pin can be neglected compared with the current
through the resistor network. The tolerance of the external resistors should be not more than 1% to ensure
minimal variation of sensed voltage.
If the power-fail comparator is unused, connect PFI to ground and leave PFO unconnected.
BATTON
Most often BATTON is used as a gate drive for an external pass transistor for high-current applications. In
addition it can be also used as a logic output to indicate the battery switchover status. BATTON is high when
V
OUT
is connected to V
BAT
.
BATTON can be directly connected to the gate of a PMOS transistor (see Figure 3). No current-limiting resistor
is required. When using a PMOS transistor, it must be connected backwards from the traditional method (see
Figure 3). This method orients the body diode from V
DD
to V
OUT
and prevents the backup battery from
discharging through the FET when its gate is high.
TPS3600
VDD
VOUT
BATTON
D
S
G
GND
PMOS FET
Body Diode
Figure 3. Driving an External MOSFET Transistor With BATTON
backup-battery switchover
In the event of a brownout or power failure, it may be necessary to keep a processor running. If a backup battery
is installed at V
BAT
, the devices automatically connect the processor to backup power when V
DD
fails. In order
to allow the backup battery (e.g., a 3.6-V lithium cell) to have a higher voltage than V
DD
, this family of supervisors
will not connect V
BAT
to V
OUT
when V
BAT
is greater than V
DD
. V
BAT
only connects to V
OUT
(through a 2-
switch)
when V
OUT
falls below V
(SWN)
and V
BAT
is greater than V
DD
. When V
DD
recovers, switchover is deferred either
until V
DD
crosses V
BAT
, or when V
DD
rises above the threshold V
(SWP)
. (See the timing diagram)
VDD > VBAT
1
VDD > V(SW)
1
VOUT
VDD
VDD
VDD
VBAT
1
0
0
1
0
0
www.ti.com
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TPS3600X50PWR | 制造商:TI 制造商全稱:Texas Instruments 功能描述:BATTERY-BACKUP SUPERVISORS FOR LOW-POWER PROCESSORS |
| TPS3606-33 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:BATTERY-BACKUP SUPERVISOR FOR LOW-POWER PROCESSORS |
| TPS3606-33DGS | 功能描述:監(jiān)控電路 Battery-Backup for LP Processor RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復位:Resettable 監(jiān)視器:No Watchdog 電池備用開關:No Backup 上電復位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
| TPS3606-33DGSG4 | 功能描述:監(jiān)控電路 Battery-Backup for LP Processor RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復位:Resettable 監(jiān)視器:No Watchdog 電池備用開關:No Backup 上電復位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
| TPS3606-33DGSR | 功能描述:監(jiān)控電路 Battery-Backup for LP Processor RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復位:Resettable 監(jiān)視器:No Watchdog 電池備用開關:No Backup 上電復位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
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