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參數(shù)資料
| 型號： | TPS3600x20PWR |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | BATTERY-BACKUP SUPERVISORS FOR LOW-POWER PROCESSORS |
| 中文描述： | 電池備份監(jiān)事的低功耗處理器 |
| 文件頁數(shù)： | 12/26頁 |
| 文件大?。?/td> | 510K |
| 代理商： | TPS3600X20PWR |
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SLVS336B DECEMBER 2000 REVISED JANUARY 2007
12
electrical characteristics over recommended operating conditions (unless otherwise noted)
(continued)
PARAMETER
TEST CONDITIONS
1.65 V
<
VIT
<
2.5 V
2.5 V
<
VIT
<
3.5 V
3.5 V
<
VIT
<
5.5 V
1.65 V
<
V(BOK)
<
2.5 V
2.5 V
<
V(BOK)
<
3.5 V
3.5 V
<
V(BOK)
<
5.5 V
MIN
TYP
20
40
50
30
60
100
12
66
85
100
110
MAX
UNIT
VIT
BATTOK
Vhys
Hysteresis
mV
PFI
V(BSW)
VDD = 1.8 V
1.65 V
<
V(SWN)
<
2.5 V
2.5 V
<
V(SWN)
<
3.5 V
3.5 V
<
V(SWN)
<
5.5 V
WDI = VDD = 5 V
MR = 0.7
×
VDD, VDD = 5 V
WDI = 0 V, VDD = 5 V
MR = 0 V, VDD = 5 V
VI
<
VDD
PFO = 0 V, VDD = 1.8 V
PFO = 0 V, VDD = 3.3 V
PFO = 0 V, VDD = 5 V
VOUT = VDD
VOUT = VBAT
VOUT = VDD
VOUT = VBAT
Disable mode, VI
<
VDD
VI = 0 V to 5.0 V
V(SWN)
IIH
High-level input current
WDI (see Note 5)
MR
WDI (see Note 5)
MR
PFI, MSWITCH
150
76
150
255
25
0.3
1.1
2.4
40
33
μ
A
IIL
Low-level input current
110
25
II
Input current
nA
IOS
Short-circuit current
PFO
mA
IDD
VDD supply current
8
μ
A
I(BAT)
VBAT supply current
0.1
0.1
40
±
1
μ
A
Ilkg
Ci
NOTE 5: For details on how to optimize current consumption when using WDI, see the detailed description section.
CEIN leakage current
μ
A
Input capacitance
5
pF
www.ti.com
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| TPS3600X25PW | 制造商:TI 制造商全稱:Texas Instruments 功能描述:BATTERY-BACKUP SUPERVISORS FOR LOW-POWER PROCESSORS |
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