
TPIC1321L
3-HALF H-BRIDGE GATE-PROTECTED LOGIC-LEVEL
POWER DMOS ARRAY
SLIS042 – NOVEMBER 1994
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
absolute maximum ratings over operating case temperature range (unless otherwise noted)
Drain-to-source voltage, V
DS
Output-to-GND voltage
Drain-to-GND voltage
SOURCE4, SOURCE6-to-GND voltage
Gate-to-source voltage range, V
GS
Continuous drain current, each output, T
C
= 25
°
C
Continuous source-to-drain diode current, T
C
= 25
°
C
Pulsed drain current, each output, I
max
, T
C
= 25
°
C (see Note 1 and Figure 15)
Continuous gate-to-source zener-diode current, T
C
= 25
°
C
Pulsed gate-to-source zener-diode current, T
C
= 25
°
C
Single-pulse avalanche energy, E
AS,
T
C
= 25
°
C (see Figures 4 and 16)
Continuous total dissipation, T
C
= 25
°
C (see Figure 15)
Operating virtual junction temperature range, T
J
Operating case temperature range, T
C
Storage temperature range
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Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
60 V
60 V
100 V
60 V
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–9 V to 18 V
1.25 A
1.25 A
4 A
. . . . . . . . . . . . . . . . . . . . .
±
50 mA
±
500 mA
96 mJ
1.39 W
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–40
°
C to 150
°
C
–40
°
C to 125
°
C
–65
°
C to 150
°
C
260
°
C
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Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Pulse duration = 10 ms, duty cycle = 2%