參數(shù)資料
型號(hào): TPDV25
英文描述: ALTERNISTORS
中文描述: 交變
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 423K
代理商: TPDV25
TPDV625 ---> TPDV1225
2/5
Symbol
Rth (j-a)
Rth (j-c) DC
Rth (j-c) AC
Parameter
Value
50
1.5
1.1
Unit
°
C/W
°C/W
°C/W
Contact to ambient
Junction to case for DC
Junction to case for 360° conduction angle (F = 50Hz)
GATE CHARACTERISTICS
(maximum values)
P
G(AV)
= 1W
P
GM
= 40W (tp = 20μs)
I
GM
= 8A (tp = 20μs)
V
GM
= 16V (tp = 20μs)
THERMAL RESISTANCES
Symbol
Test conditions
Quadrant
Value
Unit
I
GT
V
D
= 12V (DC)
R
L
= 33
Tj = 25°C
I - II - III
MAX.
150
mA
V
GT
V
D
= 12V (DC)
R
L
= 33
Tj = 25°C
I - II - III
MAX.
1.5
V
V
GD
V
D
= V
DRM
R
L
= 3.3k
Tj =125°C
I - II - III
MIN.
0.2
V
tgt
V
D
= V
DRM
dI
G
/dt = 3A/μs
I
G
= 500mA
Tj = 25°C
I - II - III
TYP.
2.5
μs
I
L
I
G
= 1.2I
GT
Tj = 25°C
I - III
TYP.
100
mA
II
200
I
H
*
I
T
= 500mA Gate open
Tj = 25°C
TYP.
50
mA
V
TM
*
I
TM
= 35A
tp = 380μs
Tj = 25°C
MAX.
1.8
V
I
DRM
I
RRM
V
DRM
rated
V
RRM
rated
Tj = 25°C
MAX.
0.02
mA
Tj = 125°C
MAX.
8
dV/dt *
Linear slope up to
V
D
= 67% V
DRM
gate open
Tj = 125°C
MIN.
500
V/
μ
s
(dI/dt)c*
(dV/dt)c = 200V/μs
Tj = 125°C
MIN.
20
A/ms
(dV/dt)c = 10V/μs
88
* For either polarity of electrode A
2
voltage with reference to electrode A
1
.
ELECTRICAL CHARACTERISTICS
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