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參數(shù)資料
| 型號： | TPC8204 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 340K |
| 代理商： | TPC8204 |
TPC8204
2003-02-18
3
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= ±10 V, V
DS
= 0 V
—
—
±10
μA
Drain cut
off current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
—
—
10
μA
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
20
—
—
V
Drain
source breakdown voltage
V
(BR) DSX
I
D
= 10 mA, V
GS
=
12 V
15
—
—
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 200 μA
0.5
—
1.2
V
R
DS (ON)
V
GS
= 2 V, I
D
= 3 A
—
22
45
R
DS (ON)
V
GS
= 2.5 V, I
D
= 3A
—
19
30
Drain
source ON resistance
R
DS (ON)
V
GS
= 4 V, I
D
= 3 A
—
16
20
m
Forward transfer admittance
|Y
fs
|
V
DS
= 10 V, I
D
= 3 A
8.5
17
—
S
Input capacitance
C
iss
—
2740
—
Reverse transfer capacitance
C
rss
—
520
—
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
—
600
—
pF
Rise time
t
r
—
3
—
Turn
on time
t
on
—
12
—
Fall time
t
f
—
21
—
Switching time
Turn
off time
t
off
—
102
—
ns
Total gate charge (gate
source
plus gate
drain)
Q
g
—
31
—
Gate
source charge
Q
gs
—
24
—
Gate
drain (“miller”) charge
Q
gd
V
DD
≈
16 V, V
GS
= 5 V, I
D
= 6 A
—
7
—
nC
Source
Drain Ratings and Characteristics
(Ta =
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse
current
Pulse (Note 1)
I
DRP
—
—
—
24
A
Forward voltage (diode)
V
DSF
I
DR
= 6 A, V
GS
= 0 V
—
—
1.2
V
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