參數(shù)資料
型號： TPC8105-H
廠商： Toshiba Corporation
英文描述： TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
文件頁數(shù)： 3/7頁
文件大?。?/td> 475K
代理商： TPC8105-H
TPC8105-H
2002-01-18
3
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= ±16 V
,
V
DS
= 0 V
—
—
±10
μA
Drain cut
off current
I
DSS
V
DS
=
30 V
,
V
GS
= 0 V
—
—
10
μA
V
(BR) DSS
I
D
=
10 mA
,
V
GS
= 0 V
30
—
—
Drain
source breakdown voltage
V
(BR) DSX
I
D
=
10 mA
,
V
GS
= 20 V
15
—
—
V
Gate threshold voltage
V
th
V
DS
=
10 V,
I
D
=
1 mA
0.8
—
2.0
V
R
DS (ON)
V
GS
=
4 V,
I
D
=
3.5 A
—
34
60
Drain
source ON resistance
R
DS (ON)
V
GS
=
10 V,
I
D
=
3.5 A
—
20
40
m
Forward transfer admittance
|Y
fs
|
V
DS
=
10 V,
I
D
=
3.5 A
5.9
12
—
S
Input capacitance
C
iss
—
1440
—
Reverse transfer capacitance
C
rss
—
330
—
Output capacitance
C
oss
V
DS
=
10 V, V
GS
= 0 V, f = 1 MHz
—
485
—
pF
Rise time
t
r
—
10
—
Turn
on time
t
on
—
18
—
Fall time
t
f
—
50
—
Switching time
Turn
off time
t
off
—
140
—
ns
Total gate charge (Gate
source
plus gate
drain)
Q
g
―
32
—
Gate
source charge
Q
gs
—
23
—
Gate
drain (“miller”) charge
Q
gd
V
DD
≈
24 V, V
GS
=
10 V, I
D
=
7 A
—
8
—
nC
Source
Drain Ratings and Characteristics
(Ta =
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse
current
Pulse (Note 1)
I
DRP
—
—
—
28
A
Forward voltage (diode)
V
DSF
I
DR
=
7 A, V
GS
= 0 V
—
—
1.2
V
相關PDF資料
PDF描述
TPC8114 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV)
TPC8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
TPC8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
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