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參數(shù)資料
| 型號： | TP5335NW |
| 廠商： | SUPERTEX INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | P-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | 85 mA, 350 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | WAFER |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 434K |
| 代理商： | TP5335NW |
2
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
11/12/01
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Switching Waveforms and Test Circuit
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
-350
-1.0
V
V
V
GS
= 0V, I
D
= -100
μ
A
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= V
DS,
I
D
= -1.0mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 0V, V
DS
= -330V
V
GS
= -4.5V, V
DS
= -25V
V
GS
= -10V, V
DS
= -25V
V
GS
= -4.5V, I
D
= -150mA
V
GS
= -10V, I
D
= -200mA
V
GS
= -10V, I
D
= -200mA
V
DS
= -25V, I
D
= -200mA
-2.4
4.5
-100
-10
mV/
°
C
nA
μ
A
-1.0
mA
-5.0
nA
I
D(ON)
ON-State Drain Current
-200
mA
-400
R
DS(ON)
75
30
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
1.7
%/
°
C
m
125
Input Capacitance
110
Common Source Output Capacitance
60
pF
Reverse Transfer Capacitance
22
Turn-ON Delay Time
20
Rise Time
15
Turn-OFF Delay Time
25
Fall Time
25
Diode Forward Voltage Drop
-1.8
V
V
GS
= 0V, I
SD
= -200mA
V
GS
= 0V, I
SD
= -200mA
Reverse Recovery Time
800
ns
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
Static Drain-to-Source
ON-State Resistance
V
GS
= 0V, V
DS
= -25V
f = 1 MHz
V
DD
= -25V
I
D
= -150mA
R
GEN
= 25
ns
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
A
= 25
°
C
0.36W
θ
jc
°
C/W
θ
ja
°
C/W
I
DR
*
I
DRM
SOT-23
*
I
D
(continuous) is limited by max rated T
j
.
-85mA
-400mA
200
350
-85mA
-400mA
Thermal Characteristics
TP5335
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