參數(shù)資料
型號(hào): TP5335K1-G
廠商: SUPERTEX INC
元件分類: 功率晶體管
英文描述: P-Channel Enhancement-Mode Vertical DMOS FET
中文描述: 85 mA, 350 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封裝: 2.90 X 1.30 MM, 1.12 MM HEIGHT, GREEN PACKAGE-3
文件頁數(shù): 1/3頁
文件大小: 405K
代理商: TP5335K1-G
TP5335
Features
High input impedance and high gain
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral source-drain diode
Free from secondary breakdown
Complementary N- and P-channel devices
Applications
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Analog switches
Power management
Telecom switches
General Description
The Supertex TP5335 is a low threshold enhancement-
mode (normally-off) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway
and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage
temperature
Soldering temperature*
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
300
O
C
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
*Distance of 1.6mm from case for 10 seconds.
Ordering Information
BV
DSs
/
BV
DGs
-350V
30Ω
R
(max)
V
(max)
Package Options
TO-236AB
TP5335K1
-2.4V
TP5335K1-G
-G indicates package is RoHS compliant (‘Green’)
P-Channel Enhancement-Mode
Vertical DMOS FET
Pin Configuration
TO-236AB
(Top View)
Gate
Source
Drain
Product Marking Information
Product marking for SOT-23:
where = 2-week alpha date code
Underline indicates Pb-Free (”Green”)
P3S
相關(guān)PDF資料
PDF描述
TP5335 P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-350V,低門限2.4V,P溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管)
TP5335 P-Channel Enhancement-Mode Vertical DMOS FETs
TP5335K1 P-Channel Enhancement-Mode Vertical DMOS FETs
TP5335NW P-Channel Enhancement-Mode Vertical DMOS FETs
TP801C04 CONNECTOR ACCESSORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TP5335NW 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:P-Channel Enhancement-Mode Vertical DMOS FETs
TP-53364-4S 制造商:Acme Electric Corporation XXX 功能描述:
TP5358 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 500UA I(DSS) | TO-226AA
TP5359 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 600UA I(DSS) | TO-226AA
TP5360 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 1.5MA I(DSS) | TO-226AA