參數(shù)資料
型號(hào): TP28F010-90
廠商: INTEL CORP
元件分類(lèi): DRAM
英文描述: 28F010 1024K (128K X 8) CMOS FLASH MEMORY
中文描述: 128K X 8 FLASH 12V PROM, 90 ns, PDIP32
封裝: 0.620 X 1.640 INCH, PLASTIC, DIP-32
文件頁(yè)數(shù): 31/33頁(yè)
文件大小: 895K
代理商: TP28F010-90
E
4.10
28F010
31
AC Characteristics
—Alternative CE#-Controlled Writes
(1)
Commercial and Extended Temperature
Versions
28F010-90
(2)
28F010-120
(2)
28F010-150
(2)
Symbol
Characteristic
Notes
Min
Max
Min
Max
Min
Max
Unit
t
AVAV
Write Cycle Time
90
120
150
ns
t
AVEL
Address Set-Up Time
0
0
0
ns
t
ELAX
Address Hold Time
45
55
55
ns
3
60
t
DVEH
Data Set-Up Time
35
45
45
ns
3
50
t
EHDX
Data Hold Time
10
10
10
ns
t
EHGL
Write Recovery Time before
Read
6
6
6
μs
t
GHWL
Read Recovery Time before
Write
4
0
0
0
ns
t
WLEL
Write Enable Set-Up Time
before Chip Enable
0
0
0
ns
t
EHWH
Write Enable Hold Time
0
0
0
ns
t
ELEH
Write Pulse Width
45
70
70
ns
3
60
t
EHEL
Write Pulse Width High
20
20
20
ns
t
EHEH1
Duration of Programming
Operation
5
10
10
10
μs
t
EHEH2
Duration of Erase Operation
5
9.5
9.5
9.5
ms
t
VPEL
V
PP
Set-Up Time to Chip
Enable Low
4
1
1
1
μs
NOTES:
1.
Read timing characteristics during read/write operations are the same as during read-only operations. Refer to AC
Characteristics for Read-Only Operations
See AC Input/Output Waveformand AC Testing Load Circuitfor testing characteristics.
Minimum specification for extended temperature product.
Guaranteed by design.
The integrated stop timer terminates the programming/erase operations, thus eliminating the need for a maximum
specification.
2.
3.
4.
5.
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