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參數(shù)資料
| 型號(hào)： | TP2635N3-G |
| 廠商： | SUPERTEX INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | P- Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | 180 mA, 350 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | GREEN PACKAGE-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 572K |
| 代理商： | TP2635N3-G |
1
TP2635/TP2640
Features
Low threshold — -2.0V max.
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
General Description
These low threshold enhancement-mode (normally-off)
transistors utilize a vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This
combination produces devices with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally
induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Ordering Information
Device
Package Options
SO-8
-
-
TP2640LG
TP2640LG-G
BV
DSS
/BV
DGS
R
DS(ON)
(max)
V
GS(th)
(max)
I
D(ON)
(min)
TO-92
TP2635N3
TP2635N3-G
TP2640N3
TP2640N3-G
TP2635
-350V
15Ω
-2.0V
-0.7A
TP2640
-400V
15Ω
-2.0V
-0.7A
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Parameter
Drain to source voltage
Drain to gate voltage
Gate to source voltage
Operating and storage temperature
Soldering temperature
1
Value
BV
DSS
BV
DGS
±20V
-55°C to +150°C
+300°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Note 1
. Distance of 1.6mm from case for 10 seconds.
Pin Configurations
S G D
TO-92
1
2
3
4
8
7
6
5
SO-8
(top view)
NC
NC
S
G
D
D
D
D
P- Channel Enhancement-Mode
Vertical DMOS FETs
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TP2640LG-G | P- Channel Enhancement-Mode Vertical DMOS FETs |
| TP2640N3-G | P- Channel Enhancement-Mode Vertical DMOS FETs |
| TP2635 | P-Channel Enhancement-Mode Vertical DMOS FETs |
| TP2635N3 | P-Channel Enhancement-Mode Vertical DMOS FETs |
| TP2640 | P-Channel Enhancement-Mode Vertical DMOS FETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TP2635N3-G P002 | 制造商:Supertex Inc 功能描述:P-CH Enhancmnt Mode MOSFET |
| TP2635N3-G P003 | 制造商:Supertex Inc 功能描述:P-CH Enhancmnt Mode MOSFET |
| TP2635N3-G P005 | 制造商:Supertex Inc 功能描述:P-CH Enhancmnt Mode MOSFET |
| TP2635N3-G P013 | 制造商:Supertex Inc 功能描述:P-CH Enhancmnt Mode MOSFET |
| TP2635N3-G P014 | 制造商:Supertex Inc 功能描述:P-CH Enhancmnt Mode MOSFET |
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