- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385943 > TP2510N8 (SUPERTEX INC) P-Channel Enhancement-Mode Vertical DMOS FETs PDF資料下載
參數(shù)資料
| 型號： | TP2510N8 |
| 廠商： | SUPERTEX INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | P-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | 0.48 A, 100 V, 3.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-243AA |
| 封裝： | SOT-89, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 456K |
| 代理商： | TP2510N8 |
2
TP2510
Thermal Characteristics
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
A
= 25
°
C
1.6W
θ
jc
°
C/W
θ
ja
°
C/W
78
I
DR
*
I
DRM
TO-243AA
-480mA
-2.5A
15
-480mA
-2.5A
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
-100
V
V
GS
= 0V, I
D
= -2.0mA
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
-1.0
-2.4
V
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= -5.0V, V
DS
= -25V
V
GS
= -10V, V
DS
= -25V
V
GS
= -5.0V, I
D
= -250mA
V
GS
= -10V, I
D
= -0.75A
V
GS
= -10V, I
D
= -0.75A
V
DS
= -25V, I
D
= -0.75A
Change in V
GS(th)
with Temperature
Gate Body Leakage
5.0
mV/
°
C
-100
nA
Zero Gate Voltage Drain Current
-10
μ
A
-1.0
mA
I
D(ON)
ON-State Drain Current
-0.4
-0.6
-1.5
-2.5
R
DS(ON)
5.0
7.0
2.0
3.5
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
1.7
%/
°
C
300
360
m
Input Capacitance
80
125
Common Source Output Capacitance
40
70
pF
Reverse Transfer Capacitance
10
25
Turn-ON Delay Time
10
Rise Time
15
Turn-OFF Delay Time
20
Fall Time
15
Diode Forward Voltage Drop
-1.8
V
V
GS
= 0V, I
SD
= -1.0A
V
GS
= 0V, I
SD
= -1.0A
Reverse Recovery Time
300
ns
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
A
Drain-to-Source
Breakdown Voltage
Static Drain-to-Source
ON-State Resistance
V
DD
= -25V,
ns
I
D
= -1.0A,
R
GEN
= 25
V
GS
= 0V, V
DS
= -25V
f = 1.0 MHz
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Switching Waveforms and Test Circuit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TP2510ND | P-Channel Enhancement-Mode Vertical DMOS FETs |
| TP2520N8 | SMD GRAB CLIP-BANAN PLUG 12 RED |
| TP2520 | P-Channel Enhancement-Mode Vertical DMOS FETs |
| TP2522 | P-Channel Enhancement-Mode Vertical DMOS FETs |
| TP2522N8 | P-Channel Enhancement-Mode Vertical DMOS FETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TP2510N8-G | 功能描述:MOSFET 100V 3.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP2510ND | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs |
| TP251NR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| TP2520 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:P-Channel Enhancement-Mode Vertical DMOS FETs |
| TP2520_07 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:P-Channel Enhancement Mode Vertical DMOS FETs |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。