參數(shù)資料
型號: TP2510
廠商: ELAN Microelctronics Corp .
英文描述: P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-100V,低門限2.4V,P溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場效應(yīng)管)
中文描述: P通道增強(qiáng)模式垂直的DMOS場效應(yīng)管(擊穿電壓- 100V的,低門限為2.4V,P溝道增強(qiáng)型垂直的DMOS結(jié)構(gòu)場效應(yīng)管)
文件頁數(shù): 3/4頁
文件大?。?/td> 30K
代理商: TP2510
7-137
TP2510
Output Characteristics
10
8
6
4
2
0
V
DS
(volts)
Saturation Characteristics
10
8
6
4
2
0
V
DS
(volts)
I
D
(
I
D
(
Maximum Rated Safe Operating Area
1
1000
100
10
0.1
1.0
10
0.01
V
DS
(volts)
I
D
(
Thermal Response Characteristics
T
1.0
0.8
0.6
0.4
0.2
0
0.001
10
0.01
0.1
1
t
p
(seconds)
Transconductance vs. Drain Current
2.0
1.6
1.2
0.8
0.4
0
0
5
1
G
F
(
I
D
(amperes)
Power Dissipation vs. Ambient Temperature
0
150
100
50
2.0
125
75
25
T
A
(
°
C)
P
D
V
DS
= 25V
0
10
20
30
50
40
4V
3V
0
2
4
6
10
8
V
GS
= 10V
V
GS
= 10V
6V
TO-243AA (pulsed)
6V
8V
4V
3V
8V
T
A
= 25
°
C
2
3
4
TO-243AA (DC)
1.0
0
TO-243AA
T
A
= 125
°
C
T
A
= -55
°
C
T
A
= 25
°
C
TO-243AA
T
A
= 25
°
C
P
D
= 1.6W
Typical Performance Curves
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TP2510_07 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs
TP2510N8 功能描述:MOSFET 100V 3.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TP2510N8-G 功能描述:MOSFET 100V 3.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TP2510ND 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs
TP251NR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC