參數(shù)資料
型號: TP0604
廠商: ELAN Microelctronics Corp .
英文描述: P-Channel Enhancement-Mode Vertical DMOS FET Quad Array(擊穿電壓-40V,低門限2.4V,P溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場效應(yīng)管四陣列)
中文描述: P通道增強(qiáng)模式垂直的DMOS場效應(yīng)管四陣列(擊穿電壓- 40V的,低門限為2.4V,P溝道增強(qiáng)型垂直的DMOS結(jié)構(gòu)場效應(yīng)管四陣列)
文件頁數(shù): 4/4頁
文件大?。?/td> 26K
代理商: TP0604
9-21
9
Gate Drive Dynamic Characteristics
–10
–8
–6
–4
–2
0
0.5
1.0
1.5
2.5
2.0
180 pF
75 pF
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
2.0
0.8
1.6
0.4
1.2
On-Resistance vs. Drain Current
7.5
6.0
5.0
3.0
1.5
0
-1
-2
-3
-5
-4
1.1
1.0
0.9
-50
0
50
100
150
Transfer Characteristics
--5
-2
0
-2
-4
-6
-10
-8
-1
-3
-4
V
DS
= -25V
T
=-55
A
=25
A
C
°
T
A
=150 C
°
Capacitance vs. Drain-to-Source Voltage
200
150
100
50
0
-10
-20
-30
-40
C
f = 1MHz
0
T
C
°
0
0
0
0
R
D
B
D
T
j
(
°
C)
I
D
(amperes)
BV
DSS
Variation with Temperature
V
GS
= -5V
V
GS
= -10V
T
j
(
°
C)
V
G
(
V
(th)
and R
DS
Variation with Temperature
V
GS
(volts)
I
D
R
D
(
V
(th)
@ -1mA
R
DS(ON)
@
-10V, -1.0A
Q
G
(nanocoulombs)
V
G
V
DS
(volts)
C
ISS
C
OSS
C
RSS
V
DS
=
-40V
V
DS
= -10V
TP0604
Typical Performance Curves
相關(guān)PDF資料
PDF描述
TP0604 CONNECTOR ACCESSORY
TP0604N3 CONNECTOR ACCESSORY
TP0604WG CONNECTOR ACCESSORY
TP0606 P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-60V,低門限2.4V,P溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場效應(yīng)管)
TP0606 CONNECTOR ACCESSORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TP0604N3 功能描述:MOSFET 40V 2Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TP0604N3 P014 制造商:Supertex Inc 功能描述:Trans MOSFET P-CH 40V 0.43A 3-Pin TO-92 T/R
TP0604N3-G 功能描述:MOSFET 40V 2 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TP0604N3-G P002 制造商:Supertex Inc 功能描述:P-CH Enhancmnt Mode MOSFET
TP0604N3-G P003 制造商:Supertex Inc 功能描述:P-CH Enhancmnt Mode MOSFET