參數(shù)資料
型號： TN6707A
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： NPN General Purpose Amplifier
中文描述： 1200 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226
封裝： TO-226, 3 PIN
文件頁數(shù)： 1/3頁
文件大小： 41K
代理商： TN6707A
2003 Fairchild Semiconductor Corporation
Rev. A, January 2003
T
Absolute Maximum Ratings*
T
A
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CEO
Collector-Emitter Voltage
V
CBO
Collector-Base Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
T
J
, T
STG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150
°
C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
A
=25
°
C unless otherwise noted
Symbol
Parameter
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage *
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector-Base Cutoff Current
I
EBO
Emitter-Base Cutoff Current
On Characteristics *
h
FE
DC Current Gain
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Thermal Characteristics
T
A
=25
°
C unless otherwise noted
Symbol
P
D
Total Device Dissipation
Derate above 25
°
C
R
θ
JC
Thermal Resistance, Junction to Case
R
θ
JA
Thermal Resistance, Junction to Ambient
FPN660
80
100
5.0
1.2
-55 ~ +150
Units
V
V
V
A
°
C
- Continuous
Test Conditions
Min.
Max.
Units
I
C
= 10mA, I
B
= 0
I
E
= 100
μ
A, I
E
= 0
I
E
= 1.0mA, I
C
= 0
V
CB
= 80V, I
E
= 0
V
EB
= 5.0V, I
C
= 0
80
100
5.0
V
V
V
μ
A
μ
A
0.1
0.1
V
CE
= 2.0V, I
C
= 50mA
V
CE
= 2.0V, I
C
= 250mA
V
CE
= 2.0V, I
C
= 500mA
I
C
= 500mA, I
B
= 50mA
I
C
= 1.0A, I
B
= 100mA
V
CE
= 2.0V, I
C
= 1.0A
40
40
25
250
V
CE
(sat)
Collector-Emitter Saturation Voltage
0.5
1.0
1.5
V
V
V
V
BE
(on)
Small Signal Characteristics
h
fe
Output Capacitance
f
T
Current Gain Bandwidth Product
Base-Emitter On Voltage
V
CE
= 5.0V, I
C
= 200mA, f = 20MHz
V
CE
= 5.0V, I
C
= 50mA, f = 20MHz
2.5
50
20
MHz
MHz
Parameter
Max.
1.0
8.0
50
125
Units
W
mW/
°
C
°
C/W
°
C/W
TN6707A
NPN General Purpose Amplifier
These devices is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.0A
Sourced from process 39.
CBE
TO-226
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TN6707A_Q 功能描述:兩極晶體管 - BJT 80V NPN Center Collector RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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TN6714A_00 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN General Purpose Amplifier
TN6714A_D26Z 功能描述:兩極晶體管 - BJT NPN Dbl-Dif SI Exptl Plnr RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
TN6714A_D27Z 功能描述:兩極晶體管 - BJT NPN Dbl-Dif SI Exptl Plnr RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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