參數(shù)資料
型號(hào)： TN2501ND
廠商： SUPERTEX INC
元件分類： 功率晶體管
英文描述： N-Channel Enhancement-Mode Vertical DMOS FETs
中文描述： 18 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： DIE
文件頁數(shù)： 2/4頁
文件大小： 476K
代理商： TN2501ND
2
Thermal Characteristics
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
A
= 25
°
C
1.6W
θ
jc
°
C/W
θ
ja
°
C/W
78
I
DR
*
I
DRM
TO-243AA
400mA
560mA
15
560mA
750mA
*
I
(continuous) is limited by max rated T
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Switching Waveforms and Test Circuit
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Drain-to-Source Breakdown Voltage
18
V
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
=
±
15V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= V
DS
= 3.0V
V
GS
= 1.2V, I
D
= 3.0mA
V
GS
= 2.0V, I
D
= 50mA
V
GS
= 3.0V, I
D
= 200mA
V
GS
= 3.0V, I
D
= 200mA
V
DS
= 3.0V, I
D
= 200mA
Gate Threshold Voltage
0.3
1.0
V
Change in V
GS(th)
with Temperature
Gate Body Leakage
-4.0
mV/
°
C
100
nA
Zero Gate Voltage Drain Current
10
μ
A
1.0
mA
I
D(ON)
R
DS(ON)
ON-State Drain Current
250
600
mA
25
3.5
2.5
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
0.75
%/
°
C
0.15
0.3
Input Capacitance
110
Common Source Output Capacitance
60
pF
Reverse Transfer Capacitance
35
Turn-ON Delay Time
5.0
Rise Time
15
Turn-OFF Delay Time
15
Fall Time
8.0
Diode Forward Voltage Drop
1.1
1.8
V
V
GS
= 0V, I
SD
= 200mA
V
GS
= 0V, I
SD
= 200mA
Reverse Recovery Time
100
ns
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
sec pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
Static Drain-to-Source
ON-State Resistance
V
DD
= 15V,
I
D
= 250mA,
R
GEN
= 25
V
GS
= 0V, V
DS
= 15V
f = 1 MHz
ns
TN2501
相關(guān)PDF資料
PDF描述
TN2501 N-Channel Enhancement-Mode Vertical DMOS FETs
TN2501N8 N-Channel Enhancement-Mode Vertical DMOS FETs
TN2501 N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓18V，低門限1.0V，N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場效應(yīng)管)
TN2504N8 N-Channel Enhancement-Mode Vertical DMOS FETs
TN2504ND N-Channel Enhancement-Mode Vertical DMOS FETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TN2504 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs
TN2504N8 功能描述:MOSFET 40V 1Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TN2504N8-G 功能描述:MOSFET 40V 1Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TN2504ND 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs
TN2510 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs
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