參數(shù)資料
型號(hào)： TMS66416410
廠商： Texas Instruments, Inc.
英文描述： 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
中文描述： 4 194 304 4位/ 2 097 152 8位/ 1 048 576由16位4，銀行同步動(dòng)態(tài)隨機(jī)存取記憶體
文件頁(yè)數(shù)： 47/56頁(yè)
文件大?。?/td> 958K
代理商： TMS66416410
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
47
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
PARAMETER MEASUREMENT INFORMATION
d
c
b
a
h
g
f
e
R1
R1
C1
R1
C0
R0
R0
R0
nHZP3
tRCD
DEAC_1
WRT_1
DEAC_0
ACTV_1
READ_0
ACTV_0
CKE
CS
A0–A9
A10
A11
A12
A13
W
CAS
RAS
DQMU
DQML
DQ8–DQ15
DQ0–DQ7
CLK
nWR
BURST
TYPE
BANK
ROW
BURST CYCLE
(D/Q)
(0–3)
ADDR
a
b
c
d
e
f
g
h
Q
0
R0
C0
C0+1
C0+2
C0+3
D
1
R1
C1
C1+1
C1+2
C1+3
Column-address sequence depends on programmed burst type and starting addresses C0 and C1 (see Table 5).
NOTE A: This example illustrates minimum tRCD read burst, and a minimum nWR write burst for the ’664xx4 at
125 MHz.
Figure 37. Read-Burst Bank 0, Write-Burst Bank 1 (With Lower Bytes Masked Out During the READ
Cycles and Upper Bytes Masked Out During the WRITE Cycles) (Only for x16)
(CAS latency = 3, burst length = 4)
相關(guān)PDF資料
PDF描述
TMS66481410 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
TMS6648148 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
TMS6648148A 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
TMS6641648 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
TMS6641648A 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TMS6641648 制造商:TI 制造商全稱:Texas Instruments 功能描述:4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
TMS6641648A 制造商:TI 制造商全稱:Texas Instruments 功能描述:4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
TMS664164DGE-10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X1MX16|CMOS|TSOP|54PIN|PLASTIC
TMS664164DGE-8 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X1MX16|CMOS|TSOP|54PIN|PLASTIC
TMS664164DGE-8A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X1MX16|CMOS|TSOP|54PIN|PLASTIC
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