參數(shù)資料
型號： TMS28F004AFT90CDBJL
廠商： Texas Instruments, Inc.
英文描述： 524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
中文描述： 524288按8-BIT/262144由16位自動選擇啟動塊閃存
文件頁數(shù)： 66/80頁
文件大小： 1080K
代理商： TMS28F004AFT90CDBJL
TMS28F004Axy, TMS28F400Axy
524288 BY 8-BIT/
262
144 BY 16-BIT
AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
SMJS829A – JANUARY 1996 – REVISED AUGUST 1997
66
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
switching characteristics for TMS28F400AZy over recommended ranges of supply voltage
(automotive temperature range) (continued)
read operations
ALT.
’28F004AZy70
’28F400AZy70
’28F004AZy80
’28F400AZy80
’28F004AZy90
’28F400AZy90
PARAMETER
SYMBOL
5-V VCC
RANGE
5-V VCC
RANGE
5-V VCC
RANGE
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
td(RP)
Output delay time from RP high
tPHQV
300
300
300
ns
tdis(BL)
Disable time, BYTE low to DQ8–DQ15 in
high-impedance state
tFLQZ
30
30
35
ns
ta(BH)
Access time from BYTE going high
tFHQV
70
80
90
ns
timing requirements for TMS28F004AZy and TMS28F400AZy (commercial and extended
temperature ranges)
write/erase operations — W-controlled writes
ALT.
’28F004AZy60
’28F400AZy60
’28F004AZy70
’28F400AZy70
’28F004AZy80
’28F400AZy80
SYMBOL
5-V VCC
RANGE
5-V VCC
RANGE
5-V VCC
RANGE
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
tc(W)
Cycle time, write
tAVAV
60
70
80
ns
tc(W)OP
Cycle time, duration of programming
operation
tWHQV1
6
6
6
μ
s
tc(W)ERB
Cycle time, erase operation (boot block)
tWHQV2
0.3
0.3
0.3
s
tc(W)ERP
Cycle time, erase operation (parameter
block)
tWHQV3
0.3
0.3
0.3
s
tc(W)ERM
td(RPR)
th(A)
th(D)
th(E)
th(VPP)
Cycle time, erase operation (main block)
tWHQV4
tPHBR
tWHAX
tWHDX
tWHEH
tQVVL
0.6
0.6
0.6
s
Delay time, boot-block relock
100
100
100
ns
Hold time, A0–A17 (see Note 15)
0
0
0
ns
Hold time, DQ valid
0
0
0
ns
Hold time, E
0
0
0
ns
Hold time, VPP from valid status-register bit
Hold time, RP at VHH from valid
status-register bit
0
0
0
ns
th(RP)
tQVPH
0
0
0
ns
tsu(A)
tsu(D)
tsu(E)
tsu(RP)
tsu(VPP)1
tw(W)
tw(WH)
trec(RPHW)
NOTE 15: A–1–A17 for byte-wide
Setup time, A0–A17 (see Note 15)
tAVWH
tDVWH
tELWL
tPHHWH
tVPWH
tWLWH
tWHWL
tPHWL
50
50
50
ns
Setup time, DQ
50
50
50
ns
Setup time, E before write operation
0
0
0
ns
Setup time, RP at VHH to W going high
Setup time, VPP to W going high
Pulse duration, W low
100
100
100
ns
100
100
100
ns
50
50
50
ns
Pulse duration, W high
10
20
30
ns
Recovery time, RP high to W going low
450
450
450
ns
相關(guān)PDF資料
PDF描述
TMS28F004AFT90CDCDL 524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
TMS28F004AMB60BDBJL 524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TMS28F004AFT90CDCDL 制造商:TI 制造商全稱:Texas Instruments 功能描述:524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
TMS28F004AMB60BDBJL 制造商:TI 制造商全稱:Texas Instruments 功能描述:524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
TMS28F004AMB60BDCDE 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
TMS28F004AMB60BDCDL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
TMS28F004AMB60CDBJL 制造商:TI 制造商全稱:Texas Instruments 功能描述:524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
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