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參數(shù)資料
| 型號： | TM248GBK32S-80 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | TRANSISTOR, NPN TO-251; Voltage, Vceo:50V; Power dissipation:15W; hfe, min:200; ft, typ:330MHz; Case style:TO-251; Case style, alternate:I-Pak; Current, Ib:1A; Current, Ic @ Vce sat:3.5A; Current, Ic hFE:500mA; Current, Ic max:8A; RoHS Compliant: Yes |
| 中文描述： | 動態(tài)隨機存儲器模塊 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 158K |
| 代理商： | TM248GBK32S-80 |
TM124FBK32, TM124FBK32S 1048576 BY 32-BIT
TM248GBK32, TM248GBK32S 2097152 BY 32-BIT
DYNAMIC RAMMODULES
SMMS664A – DECEMBER 1995 – REVISED JUNE 1996
1
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
Organization
TM124FBK32 . . . 1 048 576
×
32
TM248GBK32 . . . 2 097 152
×
32
Single 5-V Power Supply
72-pin Single In-Line Memory Module
(SIMM) for Use With Sockets
TM124FBK32 Utilizes Eight 4M-Bit Dynamic
RAMs (DRAMs) in Plastic Small-Outline
J-Lead (SOJ) Packages
TM248GBK32 Utilizes Sixteen 4M-Bit
DRAMs in Plastic SOJ Packages
Long Refresh Period
16 ms (1024 Cycles)
All Inputs, Outputs, Clocks Fully TTL
Compatible
3-State Output
Common CAS Control for Eight Common
Data-In and Data-Out Lines, In Four Blocks
Extended Data-Out (EDO) Operation With
CAS-Before-RAS (CBR), RAS-Only, and
Hidden Refresh
JEDEC First Generation 72-Pin SIMM
Pinout
Presence Detect
Performance Ranges:
ACCESS
TIME
tRAC
(MAX)
60 ns
70 ns
80 ns
60 ns
70 ns
80 ns
ACCESS
TIME
tAA
(MAX)
30 ns
35 ns
40 ns
30 ns
35 ns
40 ns
ACCESS EDO
TIME CYCLE
tCAC
(MIN)
15 ns
18 ns
20 ns
15 ns
18 ns
20 ns
tHPC
(MIN)
25 ns
30 ns
35 ns
25 ns
30 ns
35 ns
’124FBK32-60
’124FBK32-70
’124FBK32-80
’248GBK32-60
’248GBK32-70
’248GBK32-80
Low Power Dissipation
Operating Free-Air Temperature
Range . . . 0
°
C to 70
°
C
Gold-Tabbed Versions Available:
– TM124FBK32
– TM248GBK32
Tin-Lead- (Solder-) Tabbed Versions
Available:
– TM124FBK32S
– TM248GBK32S
description
TM124FBK32
The TM124FBK32 is a 4M-byte DRAM organized as four times 1 048 576
×
8 in a 72-pin leadless SIMM. The
SIMM is composed of eight TMS44409, 1 048 576
×
4-bit DRAMs, each in a 20/26-lead plastic SOJ package,
mounted on a substrate together with decoupling capacitors. Each TMS44409 is described in the TMS44409
data sheet. The TM124FBK32 is available in the single-sided BK leadless module for use with sockets.
TM248GBK32
The TM248GBK32 is a 8M-byte DRAM organized as four times 2 097 152
×
8 in a 72-pin leadless SIMM. The
SIMM is composed of sixteen TMS44409, 1 048 576
×
4-bit DRAMs, each in a 20/26-lead plastic SOJ package,
mounted on a substrate together with decoupling capacitors. Each TMS44409 is described in the TMS44409
data sheet. The TM248GBK32 is available in the double-sided BK leadless module for use with sockets.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright
1996, Texas Instruments Incorporated
Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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