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參數(shù)資料
| 型號： | TM248GBK32-80 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | DYNAMIC RAM MODULES |
| 中文描述： | 動態(tài)隨機(jī)存儲器模塊 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 158K |
| 代理商： | TM248GBK32-80 |
TM124FBK32, TM124FBK32S 1048576 BY 32-BIT
TM248GBK32, TM248GBK32S 2097152 BY 32-BIT
DYNAMIC RAMMODULES
SMMS664A – DECEMBER 1995 – REVISED JUNE 1996
2
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
operation
TM124FBK32
The TM124FBK32 operates as eight TMS44409DJs connected as shown in the functional block diagram. Refer
to the TMS44409 data sheet for details of operation. The common I/O feature of the TM124FBK32 dictates the
use of early write cycles to prevent contention on D and Q.
TM248GBK32
The TM248GBK32 operates as sixteen TMS44409DJs connected as shown in the functional block diagram.
Refer to the TMS44409 data sheet for details of operation. The common I/O feature of the TM248GBK32
dictates the use of early write cycles to prevent contention on D and Q.
specifications
Refresh period is extended to 16 ms and, during this period, each of the 1024 rows must be strobed with RAS
in order to retain data. A0–A9 address lines must be refreshed every 16 ms as required by the TMS44409
DRAM. CAS can remain high during the refresh sequence to conserve power.
single in-line memory module and components
PC substrate: 1,27
±
0,1 mm (0.05 inch) nominal thickness; 0.005 inch/inch maximum warpage
Bypass capacitors: Multilayer ceramic
Contact area for TM124FBK32 and TM248GBK32: Nickel plate and gold plate over copper
Contact area for TM124FBK32S and TM248GBK32S: Nickel plate and tin-lead over copper
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| TM248GBK32S-60 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:DYNAMIC RAM MODULES |
| TM248GBK32S-70 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:DYNAMIC RAM MODULES |
| TM248GBK32S-80 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:DYNAMIC RAM MODULES |
| TM248NBK36B | 制造商:TI 制造商全稱:Texas Instruments 功能描述:DYNAMIC RAM MODULE |
| TM248NBK36B-60 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:DYNAMIC RAM MODULE |
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