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參數(shù)資料
| 型號： | TLE2161AMP |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS |
| 中文描述： | 神劍JFET輸入高輸出驅(qū)動MPOWER的運算放大器 |
| 文件頁數(shù)： | 16/29頁 |
| 文件大?。?/td> | 457K |
| 代理商： | TLE2161AMP |
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TLE2161, TLE2161A, TLE2161B
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE
μ
POWER OPERATIONAL AMPLIFIERS
SLOS049D – NOVEMBER 1989 – REVISED MAY 1996
16
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
2 k
8 k
(see Note A)
CL
VO
VCC –
VI
+
–
VCC +
NOTE A: CL includes fixture capacitance.
Figure 1. Slew-Rate Test Circuit
VO
RS
RS
2 k
VCC –
VCC +
+
–
Figure 2. Noise-Voltage Test Circuit
VO
RL
CL
(see Note A)
10 k
100
VI
VCC –
VCC +
+
–
NOTE A: CL includes fixture capacitance.
Figure 3. Gain-Bandwidth Product and Phase-Margin Test Circuit
typical values
Typical values presented in this data sheet represent the median (50% point) of device parametric performance.
Input bias and offset current
At the picoampere bias-current level typical of the TLE2161, TLE2161A, and TLE2161B, accurate
measurement of the bias current becomes difficult. Not only does this measurement require a picoammeter,
but test socket leakages can easily exceed the actual device bias currents. To accurately measure these small
currents, Texas Instruments uses a two-step process. The socket leakage is measured using picoammeters
with bias voltages applied but with no device in the socket. The device is then inserted into the socket, and a
second test that measures both the socket leakage and the device input bias current is performed. The two
measurements are then subtracted algebraically to determine the bias current of the device.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TLE2161BMJG | 制造商:Texas Instruments 功能描述:OP Amp Single GP 制造商:Rochester Electronics LLC 功能描述:DECOMPENSATED J-FET LOW POWER OP AMP - Bulk |
| TLE2161BMJGB | 制造商:Texas Instruments 功能描述:OP Amp Single GP 制造商:Texas Instruments 功能描述:OP Amp Single GP ±18V 8-Pin CDIP Tube |
| TLE2161CD | 功能描述:運算放大器 - 運放 Low Power JFET RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| TLE2161CDG4 | 功能描述:運算放大器 - 運放 JFET-Inp Hi-Out-Drv Lo-Pwr Decompensated RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| TLE2161ID | 功能描述:運算放大器 - 運放 Low Power JFET RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
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