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參數(shù)資料
| 型號(hào)： | TLE2061CPWLE |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS |
| 中文描述： | 神劍JFET輸入高輸出驅(qū)動(dòng)MPOWER的運(yùn)算放大器 |
| 文件頁(yè)數(shù)： | 45/75頁(yè) |
| 文件大?。?/td> | 1509K |
| 代理商： | TLE2061CPWLE |
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μ
SLOS193B FEBRUARY 1997 REVISED MAY 2004
45
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
Figure 1. Slew-Rate Test Circuit
RL
(see Note A)
CL
VO
VCC
VI
+
VCC+
NOTE A: CL includes fixture capacitance.
Figure 2. Noise-Voltage Test Circuit
VO
RS
RS
2 k
VCC
VCC+
+
VO
RL
CL
(see Note A)
10 k
100
VI
VCC
VCC+
+
NOTE A: CL includes fixture capacitance.
Figure 3. Unity-Gain Bandwidth and Phase-Margin Test Circuit
typical values
Typical values presented in this data sheet represent the median (50% point) of device parametric performance.
input bias and offset current
At the picoampere bias current level typical of the TLE206x, TLE2064xA, and TLE206xB, accurate
measurement of the bias current becomes difficult. Not only does this measurement require a picoammeter,
but test socket leakages can easily exceed the actual device bias currents. To accurately measure these small
currents, Texas Instruments uses a two-step process. The socket leakage is measured using picoammeters
with bias voltages applied but with no device in the socket. The device is then inserted into the socket and a
second test that measures both the socket leakage and the device input bias current is performed. The two
measurements are then subtracted algebraically to determine the bias current of the device.
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| TLE2062BMFK | EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS |
| TLE2061ACDR | EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS |
| TLE2061ACDRG4 | EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS |
| TLE2061AIDR | EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS |
| TLE2061MDR | EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TLE2061ID | 功能描述:運(yùn)算放大器 - 運(yùn)放 JFET-Input Hi-Output Drive uPower RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補(bǔ)償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| TLE2061ID | 制造商:Texas Instruments 功能描述:OP AMP JFET-I/P SMD 2061 SOIC8 |
| TLE2061IDG4 | 功能描述:運(yùn)算放大器 - 運(yùn)放 JFET-Input Hi-Output Drive uPower RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補(bǔ)償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| TLE2061IDR | 功能描述:運(yùn)算放大器 - 運(yùn)放 JFET-Input Hi-Output Drive uPower RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補(bǔ)償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| TLE2061IDRG4 | 功能描述:運(yùn)算放大器 - 運(yùn)放 JFET-Input Hi-Output Drive uPower RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補(bǔ)償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
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