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參數(shù)資料
| 型號： | TLC372Q |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | LinCMOSE DUAL DIFFERENTIAL COMPARATORS |
| 中文描述： | LinCMOSE雙差分比較器 |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 183K |
| 代理商： | TLC372Q |
TLC372, TLC372Q, TLC372Y
LinCMOS
DUAL DIFFERENTIAL COMPARATORS
SLCS114B – NOVEMBER 1983 – REVISED MARCH 1999
10
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
PRINCIPLES OF OPERATION
input protection circuit operation
Texas Instruments patented protection circuitry allows for both positive-and negative-going ESD transients.
These transients are characterized by extremely fast rise times and usually low energies, and can occur both
when the device has all pins open and when it is installed in a circuit.
positive ESD transients
Initial positive charged energy is shunted through Q1 to V
SS
. Q1 turns on when the voltage at the input rises
above the voltage on the V
DD
pin by a value equal to the V
EB
of Q1. The base current increases through R2
with input current as Q1 saturates. The base current through R2 forces the voltage at the drain and gate of Q2
to exceed its threshold level (V
T
~ 22 V to 26 V) and turn Q2 on. The shunted input current through Q1 to V
SS
is now shunted through the n-channel enhancement-type MOSFET Q2 to V
SS
. If the voltage on the input pin
continues to rise, the breakdown voltage of the zener diode D3 is exceeded, and all remaining energy is
dissipated in R1 and D3. The breakdown voltage of D3 is designed to be 24 to 27 V, which is well below the gate
oxide voltage of the circuit to be protected.
negative ESD transients
The negative charged ESD transients are shunted directly through D1. Additional energy is dissipated in R1
and D2 as D2 becomes forward biased. The voltage seen by the protected circuit is –0.3 V to –1 V (the forward
voltage of D1 and D2).
circuit-design considerations
LinCMOS
products are being used in actual circuit environments that have input voltages that exceed the
recommended common-mode input voltage range and activate the input protection circuit. Even under normal
operation, these conditions occur during circuit power up or power down, and in many cases, when the device
is being used for a signal conditioning function. The input voltages can exceed V
ICR
and not damage the device
only if the inputs are current limited. The recommended current limit shown on most product data sheets is
±
5 mA. Figures 5 and 6 show typical characteristics for input voltage versus input current.
Normal operation and correct output state can be expected even when the input voltage exceeds the positive
supply voltage. Again, the input current should be externally limited even though internal positive current limiting
is achieved in the input protection circuit by the action of Q1. When Q1 is on, it saturates and limits the current
to approximately 5-mA collector current by design. When saturated, Q1 base current increases with input
current. This base current is forced into the V
DD
pin and into the device I
DD
or the V
DD
supply through R2
producing the current limiting effects shown in Figure 5. This internal limiting lasts only as long as the input
voltage is below the V
T
of Q2.
When the input voltage exceeds the negative supply voltage, normal operation is affected and output voltage
states may not be correct. Also, the isolation between channels of multiple devices (duals and quads) can be
severely affected. External current limiting must be used since this current is directly shunted by D1 and D2 and
no internal limiting is achieved. If normal output voltage states are required, an external input voltage clamp is
required (see Figure 7).
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| TLC372Y | LinCMOSE DUAL DIFFERENTIAL COMPARATORS |
| TLC374QD | LinCMOSE QUADRUPLE DIFFERENTIAL COMPARATORS |
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| TLC374MN | LinCMOSE QUADRUPLE DIFFERENTIAL COMPARATORS |
| TLC374Q | LinCMOSE QUADRUPLE DIFFERENTIAL COMPARATORS |
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參數(shù)描述 |
|---|---|
| TLC372QD | 功能描述:校驗(yàn)器 IC Dual Differential RoHS:否 制造商:STMicroelectronics 產(chǎn)品: 比較器類型: 通道數(shù)量: 輸出類型:Push-Pull 電源電壓-最大:5.5 V 電源電壓-最小:1.1 V 補(bǔ)償電壓（最大值）:6 mV 電源電流（最大值）:1350 nA 響應(yīng)時間: 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-70-5 封裝:Reel |
| TLC372QDG4 | 功能描述:校驗(yàn)器 IC Dual Gen Pur LinCMOS Diferential Compartr RoHS:否 制造商:STMicroelectronics 產(chǎn)品: 比較器類型: 通道數(shù)量: 輸出類型:Push-Pull 電源電壓-最大:5.5 V 電源電壓-最小:1.1 V 補(bǔ)償電壓（最大值）:6 mV 電源電流（最大值）:1350 nA 響應(yīng)時間: 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-70-5 封裝:Reel |
| TLC372QDR | 功能描述:校驗(yàn)器 IC Dual LinCMOS Differential RoHS:否 制造商:STMicroelectronics 產(chǎn)品: 比較器類型: 通道數(shù)量: 輸出類型:Push-Pull 電源電壓-最大:5.5 V 電源電壓-最小:1.1 V 補(bǔ)償電壓（最大值）:6 mV 電源電流（最大值）:1350 nA 響應(yīng)時間: 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-70-5 封裝:Reel |
| TLC372QDRG4 | 功能描述:校驗(yàn)器 IC Dual Gen Pur LinCMOS Diferential Compartr RoHS:否 制造商:STMicroelectronics 產(chǎn)品: 比較器類型: 通道數(shù)量: 輸出類型:Push-Pull 電源電壓-最大:5.5 V 電源電壓-最小:1.1 V 補(bǔ)償電壓（最大值）:6 mV 電源電流（最大值）:1350 nA 響應(yīng)時間: 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-70-5 封裝:Reel |
| TLC372QP | 制造商:TI 制造商全稱:Texas Instruments 功能描述:LinCMOSE DUAL DIFFERENTIAL COMPARATORS |
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