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參數(shù)資料
| 型號(hào)： | TK1810MK |
| 廠商： | Dynex Semiconductor Ltd. |
| 英文描述： | Phase Control Thyristor |
| 中文描述： | 相位控制晶閘管 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 177K |
| 代理商： | TK1810MK |
3/8
TK18
www.dynexsemi.com
DYNAMIC CHARACTERISTICS
V
TM
Parameter
Symbol
Conditions
Maximum on-state voltage
At 300A peak, T
case
= 25
o
C
I
RRM
/I
DRM
Peak reverse and off-state current
At V
RRM
/V
DRM
, T
case
= 125
o
C
Gate source 20V, 20
t
r
≤
0.5
μ
s, T
j
= 125C
dV/dt
Maximum linear rate of rise of off-state voltage
To 60% V
DRM
T
j
= 125
o
C, Gate open circuit
Min.
Max.
Units
-
1.5
V
-
10
mA
-
200
V/
μ
s
Repetitive 50Hz
-
500
A/
μ
s
Non-repetitive
-
800
A/
μ
s
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage
At T
vj
= 125
o
C
r
T
On-state slope resistance
At T
vj
= 125
o
C
t
gd
Delay time
I
L
Latching current
T
j
= 25
o
C, V
D
= 12V
I
H
Holding current
T
j
= 25
o
C, V
D
= 12V, I
TM
= 1A
0.9
-
V
-
2.0
m
-
1.5
μ
s
V
D
= 300V, I
G
= 1A, I
T
= 50A, dI/dt = 50A/
μ
s,
dI
G
/dt = 1A/
μ
s, T
j
= 25
o
C
-
-
mA
-
50
mA
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DRM
= 12V, T
case
= 25
o
C, R
L
= 6
Conditions
Parameter
Symbol
V
GT
Gate trigger voltage
V
DRM
= 12V, T
case
= 25
o
C, R
L
= 6
I
GT
Gate trigger current
V
GD
Gate non-trigger voltage
At V
DRM
T
case
= 125
o
C, R
L
= 12
V
FGM
Peak forward gate voltage
Anode positive with respect to cathode
V
FGN
Peak forward gate voltage
Anode negative with respect to cathode
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current
Anode positive with respect to cathode
P
GM
Peak gate power
-
P
G(AV)
Mean gate power
-
3.0
V
-
125
mA
-
0.2
V
-
3.0
V
-
0.25
V
-
5
V
-
4
A
-
16
W
-
3
W
Typ.
Max.
Units
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