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參數(shù)資料
| 型號： | TISP70XXF3 |
| 廠商： | Bourns Inc. |
| 英文描述： | LOW-VOLTAGE TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| 中文描述： | 低壓三聯(lián)元雙向可控硅過電壓保護器 |
| 文件頁數(shù)： | 15/16頁 |
| 文件大?。?/td> | 502K |
| 代理商： | TISP70XXF3 |
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Off-State Capacitance
The off-state capacitance of a TISP
device is sensitive to junction temperature, TJ, and the bias voltage, comprising of the dc voltage, VD,
and the ac voltage, Vd. All the capacitance values in this data sheet are measured with an ac voltage of 1 Vrms. When VD >> Vd, the capaci-
tance value is independent on the value of Vd. Up to 10 MHz, the capacitance is essentially independent of frequency. Above 10 MHz, the
effective capacitance is strongly dependent on connection inductance. For example, a printed wiring (PW) trace of 10 cm could create a circuit
resonance with the device capacitance in the region of 80 MHz.
The protection voltage, (V(BO) ), increases under lightning surge conditions due to thyristor regeneration. This increase is dependent on the
rate of current rise, di/dt, when the TISP
device is clamping the voltage in its breakdown region. The V(BO) value under surge conditions can
be estimated by multiplying the 50 Hz rate V(BO) (250 V/ms) value by the normalized increase at the surge’s di/dt. An estimate of the di/dt can
be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.
As an example, the ITU-T recommendation K.21 1.5 kV, 10/700 surge has an average dv/dt of 150 V/
μ
s, but, as the rise is exponential, the
initial dv/dt is three times higher, being 450 V/
μ
s. The instantaneous generator output resistance is 25
. If the equipment has an additional
series resistance of 20
, the total series resistance becomes 45
μ
s. In
practice, the measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope resistance of the TISP
breakdown region.
Capacitance
Longitudinal Balance
Figure 20 shows a three terminal TISP
device with its equivalent “delta” capacitance. Each capacitance, CTG, CRG and CTR, is the true
terminal pair capacitance measured with a three terminal or guarded capacitance bridge. If wire R is biased at a larger potential than wire T,
then CTG >CRG. Capacitance CTG is equivalent to a capacitance of CRG in parallel with the capacitive difference of (CTG - CRG). The line
capacitive unbalance is due to (CTG - CRG) and the capacitance shunting the line is CTR +CRG /2.
All capacitance measurements in this data sheet are three terminal guarded to allow the designer to accurately assess capacitive unbalance
effects. Simple two terminal capacitance meters (unguarded third terminal) give false readings as the shunt capacitance via the third terminal is
included.
APPLICATIONS INFORMATION
TISP70xxF3 (LV) Overvoltage Protector Series
Protection Voltage
Figure 20.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TISP70XXL1 | 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:TRIPLE ELEMENT THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP7125F3 | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP7125F3D | 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:MEDIUM & HIGH-VOLTAGE TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP7125F3DR | 功能描述:硅對稱二端開關元件 Triple Element Bidirectional RoHS:否 制造商:Bourns 轉折電流 VBO:40 V 最大轉折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關閉狀態(tài)電壓 VDRM:25 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP7125F3DRS | 制造商:Bourns Inc 功能描述: |
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