- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383999 > TISP6NTP2A (Bourns Inc.) QUAD FORWARD-CONDUCTING BUFFERED P-GATE THYRISTORS PDF資料下載
參數(shù)資料
| 型號： | TISP6NTP2A |
| 廠商： | Bourns Inc. |
| 英文描述： | QUAD FORWARD-CONDUCTING BUFFERED P-GATE THYRISTORS |
| 中文描述： | 四具導(dǎo)電緩沖的P -門晶閘管 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 549K |
| 代理商： | TISP6NTP2A |
Specifications are subject to change without notice.
224
JUNE 1998 - REVISED OCTOBER 2000
Operation of Gated Protectors
Figure 2. Negative Overvoltage Condition
Figure 3. Positive Overvoltage Condition
C2
100 nF
I
G
SLIC 2
TISP6NTP2A
I
K
AI6XBN
C1
100 nF
SLIC 1
SLIC
PROTECTOR
0 V
0 V
V
BAT2
V
BAT1
R1A
R1B
R2A
R2B
C2
100 nF
I
G
SLIC 2
TISP6NTP2A
AI6XBO
C1
100 nF
SLIC 1
SLIC
PROTECTOR
0 V
0 V
V
BAT2
V
BAT1
I
F
R1A
R1B
R2A
R2B
TISP6NTP2A Programmable Protector
APPLICATIONS INFORMATION
Negative overvoltages (Figure 2) are initially clipped close to the SLIC negative supply rail value (VBAT) by the conduction of the transistor
base-emitter and the thyristor gate-cathode junctions. If sufficient current is available from the overvoltage, then the thyristor will crowbar into
a low voltage ground referenced on-state condition. As the overvoltage subsides, the high holding current of the crowbar thyristor prevents
d.c. latchup. The common gate of each thyristor pair is connected the appropriate SLIC battery feed voltage (VBAT1 or VBAT2).
The negative protection voltage, V(BO), will be the sum of the gate supply (VBAT) and the peak gate (terminal)-cathode voltage (VGT). Under
a.c. overvoltage conditions VGT will be less than 2.5 V. The integrated transistor buffer in the TISP6NTP2A greatly reduces protectors source
and sink current loading on the VBAT supply. Without the transistor, the thyristor gate current would charge the VBAT supply. An electronic
power supply is not usually designed to be charged like a battery. As a result, the electronic supply would switch off and the thyristor gate
current would provide the SLIC supply current. Normally the SLIC current would be less than the gate current, which would cause the supply
voltage to increase and destroy the SLIC by a supply overvoltage. The integrated transistor buffer removes this problem.
Fast rising impulses will cause short term overshoots in gate-cathode voltage. The negative protection voltage under impulse conditions will
also be increased if there is a long connection between the gate decoupling capacitor and the gate terminal. During the initial rise of a fast
impulse, the gate current (IG ) is the same as the cathode current (IK ). Rates of 60 A/
μ
s can cause inductive voltages of 0.6 V in 2.5 cm of
printed wiring track. To minimize this inductive voltage increase of protection voltage, the length of the capacitor to gate terminal tracking
should be minimized.
Figure 2 and Figure 3 show how the TISP6NTP2A limits overvoltages. The TISP6NTP2A thyristor sections limit negative overvoltages and the
diode sections limit positive overvoltages.
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TISP7015 | Three Terminal Very Low Voltage (VLV) Protection |
| TISP7015D | Three Terminal Very Low Voltage (VLV) Protection |
| TISP7015DR | Three Terminal Very Low Voltage (VLV) Protection |
| TISP7015DR-S | Three Terminal Very Low Voltage (VLV) Protection |
| TISP7015D-S | Three Terminal Very Low Voltage (VLV) Protection |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP6NTP2A_08 | 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:QUAD FORWARD-CONDUCTING BUFFERED P-GATE THYRISTORS |
| TISP6NTP2AD | 功能描述:SCR Quad Buffered PGate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP6NTP2ADR | 功能描述:SCR Quad Buffered PGate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP6NTP2ADR-S | 功能描述:SCR Quad Buffered PGate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP6NTP2AD-S | 功能描述:SCR Quad Buffered PGate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。