- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361460 > TISP61511D (Power Innovations International, Inc.) DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS PDF資料下載
參數(shù)資料
| 型號(hào)： | TISP61511D |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| 中文描述： | 雙遠(yuǎn)期導(dǎo)電的P -可編程門晶閘管過壓保護(hù) |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 210K |
| 代理商： | TISP61511D |
7
JULY 1995 - REVISED SEPTEMBER 1997
TISP61511D, TISP61512P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
P R O D U C T I N F O R M A T I O N
Figures 4. and 5. show how the TISP6151xx limits negative and positive over-voltages. Negative overvoltages
(Figure 4.) are initially clipped close to the SLIC negative supply rail value (V
BAT
). If sufficient current is
available from the overvoltage, then the protector (Th5) will crowbar into a low voltage on-state condition. As
the overvoltage subsides the high holding current of the crowbar prevents dc latchup. The protection voltage
will be the sum of the gate supply (V
BAT
) and the peak gate-cathode voltage (V
GK(BO)
). The protection voltage
will be increased if there is a long connection between the gate decoupling capacitor, C, and the gate
terminal. During the initial rise of a fast impulse, the gate current (I
G
) is the same as the cathode current (I
K
).
Rates of 70 A/μs can cause inductive voltages of 0.7 V in 2.5 cm of printed wiring track. To minimise this
inductive voltage increase of protection voltage, the length of the capacitor to gate terminal tracking should be
minimised. Inductive voltages in the protector cathode wiring can increase the protection voltage. These
voltages can be minimised by routing the SLIC connection through the protector as shown in Figure 3.
Positive overvoltages (Figure 5.) are clipped to ground by forward conduction of the diode section in protector
(Th5). Fast rising impulses will cause short term overshoots in forward voltage (V
FRM
).
The thyristor protection voltage, (V
(BO)
) increases under lightning surge conditions due to thyristor
regeneration time. This increase is dependent on the rate of current rise, di/dt, when the TISP is clamping the
voltage in its breakdown region. The diode protection voltage, known as the forward recovery voltage, (V
FRM
)
is dependent on the rate of current rise, di/dt. An estimate of the circuit di/dt can be made from the surge
ETS 300 047-1
RLM88/I3124
K17, K20, K21
TR-NWT-001089
3000
1600
1600
1000
1.2/50
0.5/700
10/700
10/1000
38
40
40
10
0
0
0
80
40
40
30
0.6/18
0.2/310
5/310
10/1000
23
Figure 4. NEGATIVE OVERVOLTAGE CONDITION
Figure 5. POSITIVE OVERVOLTAGE CONDITION
IMPULSE GENERATORS USED FOR RATED VALUES
STANDARD
PEAK
VOLTAGE
SETTING
V
VOLTAGE
WAVE
FORM
μs
GENERATOR
FICTIVE SOURCE
IMPEDANCE
EXTERNAL
SERIES
RESISTANCE
PEAK
CURRENT
A
CURRENT
WAVE
FORM
μs
C
220 nF
I
G
Th5
SLIC
V
BAT
SLIC
PROTECTOR
TISP
6151xx
I
K
AI6XAB
Th5
SLIC
V
BAT
SLIC
PROTECTOR
TISP
6151xx
220 nF
I
F
AI6XAC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TISP61512P | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61CAP3 | PROGRAMMABLE OVERVOLTAGE PROTECTOR |
| TISP7070H3SL | TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP7125H3SL | OSC 3.3V SMT 7X5 CMOS |
| TISP7210H3SL | TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP61511DR | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61511DR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61511DS | 制造商:Bourns Inc 功能描述: |
| TISP61511D-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61512P | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。