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參數(shù)資料
| 型號(hào)： | TISP61089AS |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| 中文描述： | 雙遠(yuǎn)期導(dǎo)電的P -可編程門(mén)晶閘管過(guò)壓保護(hù) |
| 文件頁(yè)數(shù)： | 6/17頁(yè) |
| 文件大?。?/td> | 425K |
| 代理商： | TISP61089AS |
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TISP61089
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
NOVEMBER 1995 - REVISED FEBRUARY 1998
6
P R O D U C T I N F O R M A T I O N
operation of gated protectors
Figures 4. and 5. show how the TISP61089 limits negative and positive overvoltages. Positive overvoltages
(Figure 5) are clipped by the antiparallel diodes in the TISP61089 and the resulting current is diverted to
ground. Negative overvoltages (Figure 4.) are initially clipped close to the SLIC negative supply rail value
(V
BAT
). If sufficient current is available from the overvoltage, then the protector (Th5) will crowbar into a low
voltage on-state condition. As the overvoltage subsides the high holding current of the crowbar prevents d.c.
latchup. The protection voltage will be the sum of the gate supply (V
BAT
) and the peak gate-cathode voltage
(V
GK(BO)
). The protection voltage will be increased if there is a long connection between the gate decoupling
capacitor, C1, and the gate terminal. During the initial rise of a fast impulse, the gate current (I
G
) is the same
as the cathode current (I
K
). Rates of 70 A/μs can cause inductive voltages of 0.7 V in 2.5 cm of printed wiring
track. To minimise this inductive voltage increase of protection voltage, the length of the capacitor to gate
terminal tracking should be minimised. Inductive voltages in the protector cathode wiring will also increase the
protection voltage. These voltages can be minimised by routing the SLIC connection through the protector as
shown in Figure 3.
Figure 3. TISP61089 BUFFERED GATE PROTECTOR (SECTION 4.5.12 TESTING CONDITION)
Figure 4. NEGATIVE OVERVOLTAGE CONDITION
Figure 5. POSITIVE OVERVOLTAGE CONDITION
R1a
>25
RING
WIRE
TIP
WIRE
SLIC
TISP61089
V
BAT
C1
220 nF
AI6XAG
600
600
A.C.
GENERATOR
0 - 600 Vrms
SWITCHING MODE
POWER SUPPLY
Tx
GENERATOR
SOURCE
RESISTANCE
I
BAT
I
G
I
SLIC
C2
D1
R1b
>25
Th4
Th5
C1
220 nF
I
G
Th5
SLIC
V
BAT
PROTECTOR
CROWBAR
OPERATION
TISP
61089
I
K
AI6XAH
Th5
SLIC
V
BAT
PROTECTOR
DIODE
OPERATION
TISP
61089
C1
220 nF
I
F
AI6XAI
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP61089ASD | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61089ASDR | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61089ASDR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61089ASDS | 制造商:Bourns Inc 功能描述: |
| TISP61089ASD-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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