參數(shù)資料
型號： TISP4XXXL3LM
廠商： Bourns Inc.
英文描述： BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
中文描述： 雙向可控硅過電壓保護(hù)器
文件頁數(shù)： 2/6頁
文件大小： 110K
代理商： TISP4XXXL3LM
JULY 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xx0L3LM Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25
°
C (Unless Otherwise Noted)
Electrical Characteristics, TA = 25
°
C (Unless Otherwise Noted)
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage
‘4070
‘4350
V
DRM
±
58
±
275
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
10/160 (TIA/EIA-IS-968 (formerly FCC Part 68), 10/160
μ
s voltage wave shape)
5/310 (ITU-T K.21, 10/700 voltage wave shape)
I
TSP
A
50
40
40
30
10/560 (TIA/EIA-IS-968 (formerly FCC Part 68), 10/560
μ
s voltage wave shape)
5/320 (TIA/EIA-IS-968 (formerly FCC Part 68), 9/720
μ
s voltage wave shape)
Non-repetitive peak on-state current (see Notes 2 and 3)
50/60 Hz,
1 s
Initial rate of rise of on-state current,
Junction temperature
Storage temperature range
I
TSM
4
A
Linear current ramp, Maximum ramp value < 38 A
di
T
/dt
T
J
T
stg
250
A/
μ
s
°
C
°
C
-40 to +150
-65 to +150
NOTES: 1. Initially, the TISP4xxxL3LM must be in thermal equilibrium with T
J
= 25
°
C
2. The surge may be repeated after the TISP4xxxL3LM returns to its initial conditions.
3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. Derate current values at -0.61 %/
°
C for ambient temperatures above 25
°
C.
Parameter
Repetitive peak off-
state current
Test Conditions
Min
Typ
Max
Unit
I
DRM
V
D
= V
DR
T = 25
°
C
T = 85
°
C
T = 85
°
C
‘4070
M
±
10
±
70
±
350
±
5
μ
A
V
(BO)
Breakover voltage
V
(BO)
Breakover voltage
dv/dt =
±
250 V/ms,
R
SOURCE
= 300
‘4070
‘4350
V
dv/dt =
±
1000 V/
μ
s, Linear voltage ramp,
Maximum ramp value =
±
500 V
di/dt =
±
20 A/
μ
s, Linear current ramp,
Maximum ramp value =
±
10 A
'4070
'4350
±
78
±
359
V
I
(BO)
V
T
I
H
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
dv/dt =
±
250 V/ms,
I
T
=
±
5 A, t
W
= 100
μ
s
I
T
=
±
5 A, di/dt = - /+30 mA/ms
R
SOURCE
= 300
±
40
±
250
±
3
±
350
mA
V
mA
±
120
dv/dt
Linear voltage ramp, Maximum ramp value < 0.85 V
DRM
±
5
kV/
μ
s
I
D
V
D
=
±
50 V
f = 100 kHz,
±
10
50
48
39
33
30
25
μ
A
C
off
Off-state capacitance
V
d
= 1 V ms, V
D
= 0,
V
D
= 1 V,
V
D
= 5 V
f = 100 kHz,
V
d
= 1 V
‘4350
40
38
31
26
24
20
pF
ms, V
D
= 0,
V
D
= 1 V,
V
D
= 5 V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TISP4XXXM3AJ 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4XXXM3BJ 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4XXXM3LM 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP5070H3BJ 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP5070H3BJR 功能描述:硅對稱二端開關(guān)元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
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