參數(shù)資料
型號： TISP4C290H3BJ
廠商： BOURNS INC
元件分類： 浪涌電流限制器
英文描述： LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
中文描述： 290 V, 30 A, SILICON SURGE PROTECTOR
封裝： ROHS COMPLIANT, SMB, 2 PIN
文件頁數(shù)： 2/4頁
文件大?。?/td> 187K
代理商： TISP4C290H3BJ
SEPTEMBER 2004 – REVISED FEBRUARY 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Rating
Symbol
Value
±
100
Unit
Repetitive peak off-state voltage
'4C290H3BJ
'4C350H3BJ
'4C395H3BJ
V
DRM
±
220
±
275
±
320
'4C145H3BJ
'4C180H3BJ
'4C220H3BJ
±
120
±
145
±
180
'4C250H3BJ
±
190
'4C125H3BJ
V
Non-repetitive peak impulse current (see Notes 1 and 2)
2/10
μ
s (GR-1089-CORE, 2/10
μ
s voltage wave shape)
10/160
μ
s (TIA-968-A, 10/160
μ
s voltage wave shape)
5/310
μ
s (ITU-T K.44, 10/700
μ
s voltage wave shape used in K.20/21/45)
10/560
μ
s (TIA-968-A, 10/560
μ
s voltage wave shape)
10/1000
μ
s (GR-1089-CORE, 10/1000
μ
s voltage wave shape)
Non-repetitive peak on-state current (see Notes 1, 2 and 3)
20 ms, 50 Hz (full sine wave)
1000 s, 50 Hz
Junction temperature
Storage temperature range
I
PPSM
±
500
±
200
±
150
±
100
±
100
A
I
TSM
30
2.1
A
T
J
T
stg
-40 to +150
-65 to +150
°
C
°
C
NOTES: 1. Initially the device must be in thermal equilibrium with T
J
= 25
°
C.
2. The surge may be repeated after the device returns to its initial conditions.
3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths.
TISP4CxxxH3BJ Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25
°
C (Unless Otherwise Noted)
Electrical Characteristics, TA = 25
°
C (Unless Otherwise Noted)
Parameter
Test Conditions
Min
Typ
Max
±
5
±
10
Unit
I
DRM
Repetitive peak off-state current
V
D
= V
DRM
T
A
= 25
°
C
T
A
= 85
°
C
'4C125H3BJ
μ
A
V
(BO)
Breakover voltage
dv/dt =
±
250 V/ms, R
SOURCE
= 300
'4C290H3BJ
'4C350H3BJ
'4C395H3BJ
±
290
±
350
±
395
'4C145H3BJ
'4C180H3BJ
'4C220H3BJ
±
145
±
180
±
220
'4C250H3BJ
±
250
±
125
V
V
(BO)
Impulse breakover voltage
dv/dt
≤
±
1000 V/
μ
s, Linear voltage ramp,
Maximum ramp value =
±
500 V
di/dt =
±
10 A/
μ
s, Linear current ramp,
Maximum ramp value =
±
10 A
'4C290H3BJ
'4C350H3BJ
'4C395H3BJ
±
300
±
360
±
405
±
600
±
3
±
600
'4C145H3BJ
'4C180H3BJ
'4C220H3BJ
'4C290H3BJ
'4C350H3BJ
'4C395H3BJ
'4C220H3BJ
'4C250H3BJ
±
155
±
190
±
230
'4C250H3BJ
±
260
'4C125H3BJ
±
135
V
I
(BO)
V
T
I
H
Breakover current
On-state voltage
Holding current
dv/dt =
±
250 V/ms, R
SOURCE
= 300
I
T
=
±
5 A, t
w
= 100
μ
s
I
T
=
±
5 A, di/dt =
±
30 mA/ms
mA
V
mA
±
150
C
O
Off-state capacitance
f = 1 MHz, V
d
= 1 V rms, V
D
= -2 V
40
'4C125H3BJ
50
'4C145H3BJ
'4C180H3BJ
45
pF
相關(guān)PDF資料
PDF描述
TISP4C350H3BJ LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4C395H3BJ LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4CXXXH3BJ LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4XX0T3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4XXXH3_M3BJ LCAS RING AND TIP PROTECTION PAIRS BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TISP4C290H3BJR 制造商:Bourns Inc 功能描述:
TISP4C290H3BJR-S 功能描述:硅對稱二端開關(guān)元件 220V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
TISP4C350H3BJ 制造商:BOURNS 制造商全稱:Bourns Electronic Solutions 功能描述:LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4C350H3BJR 功能描述:硅對稱二端開關(guān)元件 275 TO 350V(BO) 500A(IPP) (R) RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
TISP4C350H3BJR-S 功能描述:硅對稱二端開關(guān)元件 275V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA
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