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    • 參數(shù)資料
      型號(hào): TISP2290F3
      廠商: Power Innovations International, Inc.
      英文描述: DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
      中文描述: 雙對(duì)稱瞬態(tài)電壓抑制器
      文件頁(yè)數(shù): 2/11頁(yè)
      文件大?。?/td> 211K
      代理商: TISP2290F3
      TISP2290
      DUAL SYMMETRICAL TRANSIENT
      VOLTAGE SUPPRESSORS
      NOVEMBER 1986 - REVISED SEPTEMBER 1997
      2
      P R O D U C T I N F O R M A T I O N
      absolute maximum ratings at
      25°C
      case temperature (unless otherwise noted)
      RATING
      Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
      8/20 μs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 μs)
      10/160 μs (FCC Part 68, open-circuit voltage wave shape 10/160 μs)
      5/200 μs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 μs)
      0.2/310 μs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 μs)
      5/310 μs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 μs)
      5/310 μs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 μs)
      10/560 μs (FCC Part 68, open-circuit voltage wave shape 10/560 μs)
      10/1000 μs (REA PE-60, open-circuit voltage wave shape 10/1000 μs)
      Non-repetitive peak on-state current, 50 Hz, 2.5 s (see Notes 1 and 2)
      Initial rate of rise of on-state current,
      Linear current ramp, Maximum ramp value < 38 A
      Junction temperature
      Operating free - air temperature range
      Storage temperature range
      Lead temperature 1.5 mm from case for 10 s
      NOTES: 1. Above 70°C, derate linearly to zero at 150°C case temperature
      2. This value applies when the initial case temperature is at (or below) 70°C. The surge may be repeated after the device has
      returned to thermal equilibrium.
      3. Most PTT’s quote an unloaded voltage waveform. In operation the TISP essentially shorts the generator output. The resulting
      loaded current waveform is specified.
      .
      electrical characteristics for the A and B terminals, T
      J
      = 25°C
      NOTE
      4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
      connected to the guard terminal of the bridge.
      NOTES: 5. These parameters must be measured using pulse techniques, t
      w
      = 100
      μ
      s, duty cycle
      2%.
      6. These parameters are measured with voltage sensing contacts seperate from the current carrying contacts located within 3.2 mm
      (0.125 inch) from the device body.
      7. Linear rate of rise, maximum voltage limited to 80 % V
      Z
      (minimum)..
      SYMBOL
      VALUE
      UNIT
      I
      TSP
      A
      150
      60
      50
      38
      50
      50
      45
      50
      10
      250
      150
      0 to 70
      -40 to +150
      260
      I
      TSM
      di
      T
      /dt
      T
      J
      A rms
      A/μs
      °C
      °C
      °C
      °C
      T
      stg
      T
      lead
      PARAMETER
      Reference zener
      voltage
      Off-state leakage
      current
      Off-state capacitance
      TEST CONDITIONS
      MIN
      TYP
      MAX
      UNIT
      V
      Z
      I
      Z
      =
      ±
      1mA
      ±
      200
      V
      I
      D
      V
      D
      =
      ±
      50 V
      ±
      10
      μ
      A
      C
      off
      V
      D
      =
      0
      f = 1 kHz
      (see Note 4)
      40
      100
      pF
      electrical characteristics for the A and C or the B and C terminals, T
      J
      = 25°C
      PARAMETER
      Reference zener
      voltage
      Temperature coefficient
      of reference voltage
      Breakover voltage
      Breakover current
      Peak on-state voltage
      Holding current
      Critical rate of rise of
      off-state voltage
      Off-state leakage
      current
      Off-state capacitance
      TEST CONDITIONS
      MIN
      TYP
      MAX
      UNIT
      V
      Z
      I
      Z
      =
      ±
      1mA
      ±
      200
      V
      V
      Z
      0.1
      %/
      o
      C
      V
      (BO)
      I
      (BO)
      V
      TM
      I
      H
      (see Notes 5 and 6)
      (see Note 5)
      I
      T
      =
      ±
      5 A
      (see Note 5)
      ±
      290
      ±
      0.6
      ±
      3
      V
      A
      V
      ±
      0.15
      (see Notes 5 and 6)
      ±
      1.9
      ±
      150
      mA
      dv/dt
      (see Note 7)
      ±
      5
      kV/
      μ
      s
      I
      D
      V
      D
      =
      ±
      50 V
      ±
      10
      μ
      A
      C
      off
      V
      D
      = 0
      f = 1 kHz
      (see Note 4)
      110
      200
      pF
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