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參數(shù)資料
| 型號(hào)： | TIPL760C |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | NPN SILICON POWER TRANSISTORS |
| 中文描述： | NPN硅功率晶體管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 161K |
| 代理商： | TIPL760C |
TIPL760B, TIPL760C
NPN SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
MAY 1989 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
G
Rugged Triple-Diffused Planar Construction
G
4 A Continuous Collector Current
G
Operating Characteristics Fully Guaranteed
at 100°C
G
1200 Volt Blocking Capability
G
75 W at 25°C Case Temperature
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
NOTE
1: This value applies for t
p
≤
10 ms, duty cycle
≤
2%.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
TIPL760B
TIPL760C
TIPL760B
TIPL760C
TIPL760B
TIPL760C
V
CBO
1100
1200
1100
1200
500
550
10
4
8
75
V
Collector-emitter voltage (V
BE
= 0)
V
CES
V
Collector-emitter voltage (I
B
= 0)
V
CEO
V
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
V
EBO
I
C
I
CM
P
tot
T
j
T
stg
V
A
A
W
°C
°C
-65 to +150
-65 to +150
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TIPL760 | NPN SILICON POWER TRANSISTORS |
| TIPL760A | NPN SILICON POWER TRANSISTORS |
| TIPL761B | NPN SILICON POWER TRANSISTORS |
| TIPL761C | NPN SILICON POWER TRANSISTORS |
| TIPL761 | NPN SILICON POWER TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TIPL760CS | 制造商:Bourns Inc 功能描述: |
| TIPL760C-S | 功能描述:兩極晶體管 - BJT 1200V 4A NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TIPL760-S | 功能描述:兩極晶體管 - BJT 850V 4A NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TIPL761 | 制造商:Bourns Inc 功能描述: |
| TIPL761A | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:NPN SILICON POWER TRANSISTORS |
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