參數(shù)資料
型號: TIP42C
廠商: Power Innovations International, Inc.
英文描述: PNP SILICON POWER TRANSISTORS
中文描述: 進步黨硅功率晶體管
文件頁數(shù): 1/2頁
文件大?。?/td> 34K
代理商: TIP42C
2002. 6. 25
1/2
SEMICONDUCTOR
TECHNICAL DATA
TIP42CF
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
FEATURES
Complementary to TIP41CF.
MAXIMUM RATING (Ta=25
)
DIM
MILLIMETERS
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
10.30 MAX
15.30 MAX
2.70
0.30
0.85 MAX
Φ
3.20
0.20
3.00
0.30
A
B
C
D
E
F
G
H
12.30 MAX
0.75 MAX
13.60
0.50
3.90 MAX
1.20
1.30
2.54
4.50
0.20
6.80
2.60
0.20
10
25
J
K
L
M
N
O
P
Q
R
F
O
Q
1
2
3
L
P
N
B
G
J
M
D
N
T
T
H
E
R
T
V
S
K
L
U
T
S
0.5
5
2.60
0.15
V
U
D
A
C
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-100
V
Collector-Emitter Voltage
V
CEO
-100
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
DC
I
C
-6
A
Pulse
I
CP
-10
Base Current
I
B
-2
A
Collector Power
Dissipation
Ta=25
P
C
2
W
Tc=25
25
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Emitter Sustaining Voltage
V
CEO(SUS)
I
C
=-30mA, I
B
=0
-100
-
-
V
Collector Cut-off Current
I
CEO
V
CE
=-60V, I
B
=0
-
-
-0.7
mA
Collector Cut-off Current
I
CES
V
CE
=-100V, V
EB
=0
-
-
-400
A
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-1
mA
DC Current Gain
h
FE
V
CE
=-4V, I
C
=-0.3A
30
-
-
V
CE
=-4V, I
C
=-3A
15
-
75
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-6A, I
B
=-600mA
-
-
-1.5
V
Base-Emitter On Voltage
V
BE(on)
V
CE
=-4V, I
C
=-6A
-
-
-2.0
V
Transition Frequency
f
T
V
CE
=-10V, I
C
=-500mA
3.0
-
-
MHz
相關(guān)PDF資料
PDF描述
TIP42C EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)
TIP42C COMPLEMENTARY SILICON POWER TRANSISTORS
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TIP42C POWER TRANSISTORS COMPLEMENTARY SILICON
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