參數(shù)資料
型號(hào): TIM5359-8SL
廠商: Toshiba Corporation
英文描述: MICROWAVE POWER GaAs FET
中文描述: 微波功率GaAs場(chǎng)效應(yīng)管
文件頁數(shù): 2/2頁
文件大小: 85K
代理商: TIM5359-8SL
2
TIM5359-8SL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25
°
C)
Channel Temperature
Storage Temperature
PACKAGE OUTLINE (2-11D1B)
V
DS
V
GS
I
DS
P
T
T
ch
T
stg
V
V
A
W
°
C
°
C
15
-5
7.0
37.5
175
-65 to +175
Unit in mm
Gate
Source
Drain
HANDLING PRECAUTIONS FOR PACKAGED TYPE
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260
°
C.
3
±
0
0
+
-
0
1
±
0
2
±
0
5
4
4
1
±
0
4-C1.2
0.6
±
0.15
17
±
0.3
11.0 MAX.
21
±
0.2
12
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