參數(shù)資料
型號: THS770012IRGET
廠商: TEXAS INSTRUMENTS INC
元件分類: 模擬信號調(diào)理
英文描述: SPECIALTY ANALOG CIRCUIT, PQCC24
封裝: GREEN, PLASTIC, VQFN-24
文件頁數(shù): 12/35頁
文件大小: 1305K
代理商: THS770012IRGET
THS7700
12IRGE
TI YMS
LLLL
= Pin 1 designator
THS7700012IRGE = device name
TI = TI LETTERS
YM = YEAR MONTH DATE CODE
S = ASSEMBLY SITE CODE
LLLL = ASSY LOT CODE
SLOS669B
– FEBRUARY 2010 – REVISED MAY 2011
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION(1)
SPECIFIED
PACKAGE
ORDERING
TRANSPORT
PRODUCT
TEMPERATURE
TYPE
DESIGNATOR
MARKING
NUMBER
MEDIA, QUANTITY
RANGE
THS770012IRGE
THS770012IRGET
Tape and reel, 250
THS770012
VQFN-24
RGE
–40°C to +85°C
THS770012IRGE
THS770012IRGER
Tape and reel, 3000
(1)
For the most current package and ordering information see the Package Option Addendum at the end of this document, or visit the
device product folder on www.ti.com.
Figure 3. DEVICE MARKING INFORMATION
ABSOLUTE MAXIMUM RATINGS
(1)
Over operating free-air temperature range, unless otherwise noted.
THS770012
UNIT
Power supply (VS+ to GND)
5.5
V
Input voltage range
Ground to VS+
V
Differential input voltage, VID
Ground to VS+
V
Continuous input current, II
10
mA
Continuous output current, IO
100
mA
Storage temperature range, Tstg
–65°C to +150°C
°C
Maximum junction temperature, TJ
+150
°C
Maximum junction temperature, continuous operation, long term reliability
+125
°C
Human body model (HBM)
2500
V
ESD ratings
Charged device model (CDM)
1000
V
Machine model (MM)
100
V
(1)
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
2
Copyright
2010–2011, Texas Instruments Incorporated
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